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BSS84 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # BSS84
Description  P-CHANNEL ENHANCEMENT MODE MOSFET
PDF  6 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

BSS84 Datasheet(HTML) 2 Page - Diodes Incorporated

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BSS84
Document number: DS30149 Rev. 22 - 2
2 of 6
www.diodes.com
May 2017
© Diodes Incorporated
BSS84
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-50
V
Drain-Gate Voltage RGS  20k
VDGR
-50
V
Gate-Source Voltage
Continuous
VGSS
±20
V
Drain Current (Note 6)
Continuous
ID
-130
mA
Pulsed Drain Current
IDM
-1.2
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 6)
PD
300
mW
Thermal Resistance, Junction to Ambient
RJA
417
C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
-50
V
VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current
IDSS

-1
-2
-100
µA
µA
nA
VDS = -50V, VGS = 0V, TJ = +25°C
VDS = -50V, VGS = 0V, TJ = +125°C
VDS = -25V, VGS = 0V, TJ = +25°C
Gate-Body Leakage
IGSS
±10
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(TH)
-0.8
-2.0
V
VDS = VGS, ID = -1mA
Static Drain-Source On-Resistance
RDS(ON)
10
VGS = -5V, ID = -0.100A
Forward Transconductance
gFS
0.05
S
VDS = -25V, ID = -0.1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
24.6
45
pF
VDS = -25V, VGS = 0V, f = 1.0MHz
Output Capacitance
Coss
4.7
25
pF
Reverse Transfer Capacitance
Crss
2.8
12
pF
Gate Resistance
Rg

916
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = -4.5V)
Qg
0.28
nC
VDS = -10V, ID = -0.1A
Total Gate Charge (VGS = -10V)
Qg
0.59
nC
Gate-Source Charge
Qgs
0.09
nC
Gate-Drain Charge
Qgd
0.08
nC
Turn-On Delay Time
tD(ON)
10
ns
VDD = -30V, ID = -0.27A,
RGEN = 50, VGS = -10V
Turn-Off Delay Time
tD(OFF)
18
ns
Notes:
6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown in Diodes Incorporated
’s package outline PDFs, which can be found
on our website at http://www.diodes.com/package-outlines.html.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.



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