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BAS70 Datasheet(PDF) 1 Page - Diotec Semiconductor |
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BAS70 Datasheet(HTML) 1 Page - Diotec Semiconductor |
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1 / 2 page ![]() BAS70, BAS70-04, BAS70-05, BAS70-06 BAS70, BAS70-04, BAS70-05, BAS70-06 SMD Small Signal Schottky Diodes SMD Kleinsignal-Schottkydioden IFAV = 70 mA VF1 < 0.41 V Tjmax = 150°C VRRM = 70 V IFSM = 100 mA trr < 5 ns Version 2017-07-07 SOT-23 (TO-236) Dimensions - Maße [mm] Typical Applications Signal processing, High-speed switching, Polarity protection Commercial grade 1) Typische Anwendungen Signalverarbeitung, Schnelles Schalten, Verpolschutz Standardausführung 1) Features Very high switching speed Low junction capacitance Low leakage current Compliant to RoHS, REACH, Conflict Minerals 1) Besonderheiten Extrem schnelles Schalten Niedrige Sperrschicht-Kapazität Niedriger Sperrstrom Konform zu RoHS, REACH, Konfliktmineralien 1) Mechanical Data 1) Mechanische Daten 1) Taped and reeled 3000 / 7“ Gegurtet auf Rolle Weight approx. 0.01 g Gewicht ca. Solder & assembly conditions 260°C/10s Löt- und Einbaubedingungen MSL = 1 Single Diode BAS70 1 = A 2 = n. c. 3 = C Type Code 73 Series Connection BAS70-04 1 = A1 2 = C2 3 = C1/A2 Type Code 74 Common Cathode BAS70-05 1 = A1 2 = A2 3 = C1/C2 Type Code 75 Common Anode BAS70-06 1 = C1 2 = C2 3 = A1/A2 Type Code 76 Maximum ratings 2) Grenzwerte 2) Power dissipation − Verlustleistung 3) Ptot 200 mW 4) Max. average forward current – Dauergrenzstrom DC IFAV 70 mA 4) Repetitive peak forward current – Periodischer Spitzenstrom IFRM 70 mA 4) Non repetitive peak forward surge current – Stoßstrom-Grenzwert tp ≤ 1 s IFSM 100 mA Repetitive peak reverse voltage – Periodische Spitzensperrspannung VRRM 70 V Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C 1 Please note the detailed information on our website or at the beginning of the data book Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches 2 TA = 25°C and per diode, unless otherwise specified – TA = 25°C und pro Diode, wenn nicht anders angegeben 3 Total power dissipation of both diodes − Summe der Verlustleistungen beider Dioden 4 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss © Diotec Semiconductor AG http://www.diotec.com/ 1 Pb RoHS 1.1 +0.1 0.4+0.1 2.9 ±0.1 1 2 3 Type Code 1.9 ±0.1 -0.05 -0.2 2 1 3 2 3 1 2 1 3 2 1 3 |
Similar Part No. - BAS70_17 |
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Similar Description - BAS70_17 |
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