BC849 datasheet(2/2 Pages) DIOTEC

2 / 2 page

BC846A ... BC850C

Characteristics

Kennwerte

Tj = 25°C

Min.

Typ.

Max.

DC current gain – Kollektor-Basis-Stromverhältnis

VCE = 5 V, IC = 10 µA

Group A

Group B

Group C

hFE

–

150

270

–

VCE = 5 V, IC = 2 mA

Group A

Group B

Group C

hFE

110

200

420

180

290

520

220

450

800

Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VCEsat

–

90 mV

200 mV

250 mV

600 mV

Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VBEsat

–

700 mV

900 mV

–

Base-Emitter-voltage – Basis-Emitter-Spannung 2)

VCE = 5 V, IC = 2 mA

VCE = 5 V, IC = 10 mA

VBE

580 mV

–

660 mV

–

700 mV

720 mV

Collector-Base cutoff current – Kollektor-Basis-Reststrom

VCB = 30 V, (E open)

VCE = 30 V, Tj = 125°C, (E open)

ICBO

–

15 nA

5 µA

Emitter-Base cutoff current

VEB = 5 V, (C open)

IEBO

–

100 nA

Gain-Bandwidth Product – Transitfrequenz

VCE = 5 V, IC = 10 mA, f = 100 MHz

–

300 MHz

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 10 V, IE =ie = 0, f = 1 MHz

CCBO

–

3.5 pF

6 pF

Emitter-Base Capacitance – Emitter-Basis-Kapazität

VEB = 0.5 V, IC = ic = 0, f = 1 MHz

CEBO

–

9 pF

–

Thermal resistance junction to ambient

Wärmewiderstand Sperrschicht – Umgebung

RthA

< 420 K/W 2)

Disclaimer: See data book page 2 or website

Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet

Tested with pulses tp = 300 µs, duty cycle ≤ 2%

Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

http://www.diotec.com/

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