SI7810DN datasheet(2/4 Pages) VISHAY

2 / 4 page

Si7810DN

Vishay Siliconix

New Product

www.vishay.com

Document Number: 70689

S-04559—Rev. A, 27-Aug-01

MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

VDS = 80 V, VGS = 0 V

Zero Gate Voltage Drain Current

IDSS

VDS = 80 V, VGS = 0 V, TJ = 55_C

On-State Drain Currenta

ID(on)

VDS w 5 V, VGS = 10 V

VGS = 10 V, ID = 5.4 A

0.052

0.062

Drain-Source On-State Resistancea

rDS(on)

VGS = 6 V, ID = 4.6 A

0.070

0.084

Forward Transconductancea

gfs

VDS = 15 V, ID = 5.4 A

Diode Forward Voltagea

VSD

IS = 3.2 A, VGS = 0 V

0.78

1.2

Dynamicb

Total Gate Charge

13.5

Gate-Source Charge

Qgs

VDS = 50 V, VGS = 10 V, ID = 5.4 A

Gate-Drain Charge

Qgd

4.6

Turn-On Delay Time

td(on)

Rise Time

VDD = 50 V, RL = 50 W

Turn-Off Delay Time

td(off)

VDD = 50 V, RL = 50 W

ID ^ 1 A, VGEN = 10 V, RG = 6 W

Fall Time

Source-Drain Reverse Recovery Time

trr

IF = 3.2 A, di/dt = 100 A/ms

Notes

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

012

567

1234

VGS = 10 thru 7 V

TC = 125_C

4 V

–55

5 V

Output Characteristics

Transfer Characteristics

VDS – Drain-to-Source Voltage (V)

VGS – Gate-to-Source Voltage (V)

6 V

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