BF1208 datasheet(13/22 Pages) PHILIPS

13 / 22 page

9397 750 14254

Product data sheet

Rev. 01 — 16 March 2005

13 of 22

Philips Semiconductors

BF1208

Dual N-channel dual gate MOSFET

(1) VG2-S =4V.

(2) VG2-S = 3.5 V.

(3) VG2-S =3V.

(4) VG2-S = 2.5 V.

(5) VG2-S =2V.

(6) VG2-S = 1.5 V.

(7) VG2-S =1V.

VDS(B) =5V; VDS(A) =VG1-S(A) =0V; Tj =25 °C.

(1) VG2-S =4V.

(2) VG2-S = 3.5 V.

(3) VG2-S =3V.

(4) VG2-S = 2.5 V.

(5) VG2-S =2V.

(6) VG2-S = 1.5 V.

(7) VG2-S =1V.

VDS(B) =5V; VDS(A) =VG1-S(A) =0V; Tj =25 °C.

Fig 19. Ampliﬁer B: gate1 current as a function of

gate1 voltage; typical values

Fig 20. Ampliﬁer B: forward transfer admittance as a

function of drain current; typical values

VDS(B) =5V; VG2-S =4V; VDS(A) =VG1-S(A) =0V;

Tj =25 °C.

VDS(B) =5V; VG2-S =4V; VDS(A) =VG1-S(A) =0V;

Tj =25 °C; RG1 = 150 kΩ (connected to VGG); see

Figure 3.

Fig 21. Ampliﬁer B: drain current as a function of gate1

current; typical values

Fig 22. Ampliﬁer B: drain current as a function of gate1

supply voltage; typical values

VG1-S (V)

1.6

0.8

1.2

0.4

001aaa570

100

IG1

(

µA)

(1)

(2)

(4)

(6)

(7)

(3)

(5)

ID (mA)

032

816

001aaa571

yfs

(mS)

(1)

(2)

(3)

(4)

(5)

(6)

(7)

IG1 (µA)

050

001aaa572

(mA)

VGG (V)

001aaa573

(mA)

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