BF1208 datasheet(2/22 Pages) PHILIPS

2 / 22 page

9397 750 14254

Product data sheet

Rev. 01 — 16 March 2005

2 of 22

Philips Semiconductors

BF1208

Dual N-channel dual gate MOSFET

1.4 Quick reference data

[1]

Tsp is the temperature at the soldering point of the source lead.

Pinning information

Table 1:

Quick reference data

Per MOSFET unless otherwise speciﬁed.

Symbol Parameter

Conditions

Min

Typ

Max Unit

VDS

drain-source voltage (DC)

drain current (DC)

Ptot

total power dissipation

Tsp ≤ 109 °C

[1] -

180

|yfs|

forward transfer admittance

f = 1 MHz

ampliﬁer A; ID =19mA

ampliﬁer B; ID =13mA

Ciss(G1)

input capacitance at gate1

f = 1 MHz

ampliﬁer A

2.2

2.7

ampliﬁer B

2.0

2.5

Crss

reverse transfer capacitance f = 1 MHz

noise ﬁgure

ampliﬁer A; f = 400 MHz

1.3

1.9

ampliﬁer B; f = 800 MHz

1.4

2.1

Xmod

cross-modulation

input level for k = 1 % at

40 dB AGC

ampliﬁer A

100

105

µV

ampliﬁer B

100

103

µV

junction temperature

150

°C

Table 2:

Discrete pinning

Description

Simpliﬁed outline

Symbol

gate1 (AMP A)

gate2

gate1 (AMP B)

drain (AMP B)

source

drain (AMP A)

sym089

G1B

G1A

AMP B

AMP A

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