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TSM2NB65 Datasheet(PDF) 5 Page - Taiwan Semiconductor Company, Ltd |
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TSM2NB65 Datasheet(HTML) 5 Page - Taiwan Semiconductor Company, Ltd |
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5 / 8 page  TSM2NB65 Taiwan Semiconductor 5 Version:B1706 0 100 200 300 400 500 600 700 800 0 5 10 15 20 25 0.4 0.6 0.8 1 1.2 1.4 1.6 -50 0 50 100 150 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Capacitance vs. Drain-Source Voltage BVDSS vs. Junction Temperature Maximum Safe Operating Area (TO-251/252) Normalized Thermal Transient Impedance, Junction-to-Case (TO-251/252) t, Square Wave Pulse Duration (sec) Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single pulse VDS, Drain to Source Voltage (V) TJ, Junction Temperature (°C) CISS COSS CRSS ID=250uA 0.01 0.1 1 10 10 100 1000 V DS, Drain to Source Voltage (V) R DS(ON) SINGLE PULSE RӨJC=1.9°C/W TC=25°C SINGLE PULSE RӨJC=1.9°C/W |
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