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TSM60NB190CF Datasheet(PDF) 3 Page - Taiwan Semiconductor Company, Ltd |
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TSM60NB190CF Datasheet(HTML) 3 Page - Taiwan Semiconductor Company, Ltd |
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3 / 6 page ![]() TSM60NB190CF Taiwan Semiconductor 3 Version: A1612 CHARACTERISTICS CURVES (TC = 25°C unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate-Source Voltage vs. Gate Charge On-Resistance vs. Junction Temperature On-Resistance vs. Gate-Source Voltage VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) Qg, Gate Charge (nC) ID, Drain Current (A) TJ, Junction Temperature (°C) VGS, Gate to Source Voltage (V) 0 2 4 6 8 10 0 7 14 21 28 35 V DS=480V I D=3.7A 0 0.5 1 1.5 2 2.5 3 -75 -50 -25 0 25 50 75 100 125 150 V GS=10V I D=3.7A 0 5 10 15 20 0 2 4 6 8 10 25℃ -55℃ 150℃ 0 4 8 12 16 20 0 2 4 6 8 10 V GS=10V V GS=9V V GS=8V V GS=7V V GS=6V V GS=5V 0 0.05 0.1 0.15 0.2 0.25 0.3 0 4 8 12 16 20 V GS=10V 0.1 0.15 0.2 0.25 0.3 4 5 6 7 8 9 10 I D=3.7A |
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