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OP913 Datasheet(PDF) 2 Page - TT Electronics. |
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OP913 Datasheet(HTML) 2 Page - TT Electronics. |
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2 / 3 page ![]() © TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. PIN Silicon Photodiode OP913 Series Issue A 08/2016 Page 2 OPTEK Technology, Inc. 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 www.optekinc.com | www.ttelectronics.com Absolute Maximum Ratings (TA = 25° C unless otherwise noted) Storage Temperature Range -65°C to +150°C Operating Temperature Range -65°C to +125°C Reverse Voltage 32 V Lead Soldering Temperature [ 1/16 inch (1.6 mm) from the case for 5 seconds with soldering iron] 260°C(1) Power Dissipation 150 mW(2) Electrical Specifications Electrical Characteristics (TA = 25° C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS IL Reverse Light Current: OP913SL OP913WSL 120 40 - - - - μA VR = 5 V, EE = 5 mW/cm 2 (3)(4) ID Reverse Dark Current - - 25 nA VR = 10 V, EE = 0 (3) VCC Open Circuit Voltage: OP913SL OP913WSL - - 400 300 - - mW EE = 5 mW/cm 2(4) ISC Short Circuit Current: OP913SL OP913WSL 120 40 - - - - V EE = 5 mW/cm 2(4) VBR Reverse Breakdown Voltage 32 - - V EE = 100 µA CT Total Capacitance - - 150 pF VR = 0, EE = 0, F = 1 MHz tON, tOFF Turn On / Turn Off Time - 50 - ns VR = 10 V, RL = 1 kΩ Notes: (1) RMA flux is recommended. Dura on can be extended to a maximum of 10 seconds when flow soldering. (2) Derate linearly 1.5 mW/° C above 25° C. (3) Junc on temperature for all devices in this data sheet is maintained at 25° C. (4) Light source is an unfiltered tungsten bulb opera ng at CT = 2870 K or equivalent infrared source. (5) At any par cular wavelength the flux responsively, Rθ is related to quantum efficiency by: Rθ = ηq (λ/1240), where ηq is the quantum efficiency in electrons per photon and λ is the wavelength in nanometers; thus at 900 nm, 0.60 A/W corresponds to a quantum efficiency of 83%. (6) NEP is the radiant flux at a specified wavelength, required for unity signal-to-noise ra o normalized for bandwidth. NEP calcula on is made using responsivity at peak sensi vity wavelength, with spot noise measurement at 1000 Hz in a noise bandwidth of 6 Hz. (λ, f, ∆ f) = (λp, 1000 Hz, 6 Hz). |
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