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LM4804 Datasheet(PDF) 8 Page - National Semiconductor (TI) |
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LM4804 Datasheet(HTML) 8 Page - National Semiconductor (TI) |
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8 / 16 page ![]() Application Information BRIDGE CONFIGURATION EXPLANATION Audio Amplifier portion of the LM4804 has two operational amplifiers internally, allowing for a few different amplifier configurations. The first amplifier’s gain is externally config- urable, while the second amplifier is internally fixed in a unity-gain, inverting configuration. The closed-loop gain of the first amplifier is set by selecting the ratio of Rf to Ri while the second amplifier’s gain is fixed by the two internal 20k Ω resistors. Figure 1 shows that the output of amplifier one serves as the input to amplifier two which results in both amplifiers producing signals identical in magnitude, but out of phase by 180˚. Consequently, the differential gain for the IC is A VD = 2 *(Rf/Ri) By driving the load differentially through outputs Vo1 and Vo2, an amplifier configuration commonly referred to as “bridged mode” is established. Bridged mode operation is different from the classical single-ended amplifier configura- tion where one side of the load is connected to ground. A bridge amplifier design has a few distinct advantages over the single-ended configuration, as it provides differential drive to the load, thus doubling output swing for a specified supply voltage. Four times the output power is possible as compared to a single-ended amplifier under the same con- ditions. This increase in attainable output power assumes that the amplifier is not current limited or clipped. In order to choose an amplifier’s closed-loop gain without causing ex- cessive clipping, please refer to the Audio Power Amplifier Design section. A bridge configuration also creates a second advantage over single-ended amplifiers. Since the differential outputs, Vo1 and Vo2, are biased at half-supply, no net DC voltage exists across the load. This eliminates the need for an output coupling capacitor which is required in a single supply, single-ended amplifier configuration. Without an output cou- pling capacitor, the half-supply bias across the load would result in both increased internal IC power dissipation and also possible loudspeaker damage. AMPLIFIER POWER DISSIPATION Power dissipation is a major concern when designing a successful amplifier, whether the amplifier is bridged or single-ended. A direct consequence of the increased power delivered to the load by a bridge amplifier is an increase in internal power dissipation. Since the amplifier portion of the LM4804 has two operational amplifiers, the maximum inter- nal power dissipation is 4 times that of a single-ended am- plifier. The maximum power dissipation for a given BTL application can be derived from Equation 1. P DMAX(AMP) = 4(VDD) 2 /(2 π2R L) (1) BOOST CONVERTER POWER DISSIPATION At higher duty cycles, the increased ON time of the FET means the maximum output current will be determined by power dissipation within the LM2731 FET switch. The switch power dissipation from ON-state conduction is calculated by Equation 2. P DMAX(SWITCH) =DCxIIND(AVE) 2 xR DS(ON) (2) There will be some switching losses as well, so some derat- ing needs to be applied when calculating IC power dissipa- tion. TOTAL POWER DISSIPATION The total power dissipation for the LM4804 can be calculated by adding Equation 1 and Equation 2 together to establish Equation 3: P DMAX(TOTAL) = [4*(VDD) 2/ 2 π2R L]+[DCxIIND(AVE) 2xR DS(ON)] (3) The result from Equation 3 must not be greater than the power dissipation that results from Equation 4: P DMAX =(TJMAX -TA)/ θJA (4) For package LQA28A, θ JA = 59˚C/W. TJMAX = 125˚C for the LM4804. Depending on the ambient temperature, T A,ofthe system surroundings, Equation 4 can be used to find the maximum internal power dissipation supported by the IC packaging. If the result of Equation 3 is greater than that of Equation 4, then either the supply voltage must be in- creased, the load impedance increased or T A reduced. For the typical application of a 3V power supply, with V1 set to 6.0V and 8 Ω load, the maximum ambient temperature pos- sible without violating the maximum junction temperature is approximately TBD˚C provided that device operation is around the maximum power dissipation point. Thus, for typi- cal applications, power dissipation is not an issue. Power dissipation is a function of output power and thus, if typical operation is not around the maximum power dissipation point, the ambient temperature may be increased accord- ingly. Refer to the Typical Performance Characteristics curves for power dissipation information for lower output levels. EXPOSED-DAP PACKAGE PCB MOUNTING CONSIDERATIONS The LM4804’s exposed-DAP (die attach paddle) package (LD) provides a low thermal resistance between the die and the PCB to which the part is mounted and soldered. This allows rapid heat transfer from the die to the surrounding PCB copper traces, ground plane, and surrounding air. The LD package should have its DAP soldered to a copper pad on the PCB. The DAP’s PCB copper pad may be connected to a large plane of continuous unbroken copper. This plane forms a thermal mass, heat sink, and radiation area. Further detailed and specific information concerning PCB layout, fabrication, and mounting an LD (LLP) package is available from National Semiconductor’s Package Engineering Group under application note AN1187. SHUTDOWN FUNCTION In many applications, a microcontroller or microprocessor output is used to control the shutdown circuitry to provide a quick, smooth transition into shutdown. Another solution is to use a single-pole, single-throw switch, in conjunction with an external pull-up resistor to drive both shutdown pins simul- taneously. When the switch is closed, the shutdown pin is connected to ground which disables the amplifier. If the switch is open, then the external pull-up resistor to V DD will enable the LM4804. This scheme guarantees that the shut- down pins will not float thus preventing unwanted state changes. www.national.com 8 |
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