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TSDF02830YR Datasheet(PDF) 2 Page - Vishay Siliconix

Part # TSDF02830YR
Description  Dual - MOSMIC two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage
PDF  6 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TSDF02830YR Datasheet(HTML) 2 Page - Vishay Siliconix

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Document Number 85164
Rev. 1, 25-Oct-02
www.vishay.com
2
VISHAY
TSDF02830YR
Vishay Semiconductors
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Amplifier 1
Following data are valid for operating amplifier 1(pin 1, 3, 2, 5) which is optimized for UHF applications
Amplifier 2
Following data are valid for operating amplifier 2 (pin 6, 4, 2, 5) which is optimized for VHF applications
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Amplifier 1
Following data are valid for operating amplifier 1(pin 1, 3, 2, 5) which is optimized for UHF applications
Part
Marking
Package
TSDF02830YR
WM1
SOT363R
Parameter
Test condition
Symbol
Value
Unit
Drain - source voltage
VDS
8
V
Drain current
ID
25
mA
Gate 1/Gate 2 - source peak
current
± IG1/G2SM
10
mA
Gate 1 - source voltage
+ VG1SM
6
V
- VG1SM
1.5
V
Gate 2 - source voltage
± VG2SM
6
V
Total power dissipation
Tamb ≤ 60 °C
Ptot
200
mW
Channel temperature
TCh
150
°C
Storage temperature range
Tstg
- 55 to + 150
°C
Channel ambient
on glass fibre printed board (25 x
20 x 1.5) mm3 plated with 35 µm
Cu
RthChA
450
K/W
Parameter
Test condition
Symbol
Value
Unit
Drain - source voltage
VDS
8
V
Drain current
ID
30
mA
Gate 1/Gate 2 - source peak
current
± IG1/G2SM
10
mA
Gate 1 - source voltage
+ VG1SM
6
V
- VG1SM
1.5
V
Gate 2 - source voltage
± V
G2SM
6
V
Total power dissipation
Tamb ≤ 60 °C
Ptot
200
mW
Channel temperature
TCh
150
°C
Storage temperature range
Tstg
- 55 to + 150
°C
Channel ambient
on glass fibre printed board (25 x
20 x 1.5) mm3 plated with 35 µm
Cu
RthChA
450
K/W
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Drain - source breakdown voltage
ID = 10 µA, VG1S = VG2S = 0
V(BR)DSS
12
V
Gate 1 - source breakdown voltage + IG1S = 10 mA, VG2S = VDS = 0
+ V(BR)G1SS
7
10
V
Gate 2 - source breakdown voltage
± I
G2S = 10 mA, VG1S = VDS = 0
± V
(BR)G2SS
7
10
V



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