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TSDF02830YR Datasheet(PDF) 4 Page - Vishay Siliconix |
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TSDF02830YR Datasheet(HTML) 4 Page - Vishay Siliconix |
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4 / 6 page ![]() Document Number 85164 Rev. 1, 25-Oct-02 www.vishay.com 4 VISHAY TSDF02830YR Vishay Semiconductors Remark on improving intermodulation behavior: By setting RG1 smaller than 100 kΩ, e.g. 68 kΩ typical value of IDSO will raise and improved intermodulation behavior will be performed. Amplifier 2 VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 56 kΩ, ID = IDSO, f = 1 MHz, Tamb = 25 °C, unless otherwise specified Following data are valid for operating amplifier 2 (pin 6, 4, 2, 5) which is optimized for VHF applications Remark on improving intermodulation behavior: By setting RG1 smaller than 56 kΩ, typical value of IDSO will raise and improved intermodulation behavior will be performed. Cross modulation Input level for k = 1 % @ 0 dB AGC fw = 50 MHz, funw = 60 MHz Xmod 90 dBµV Input level for k = 1 % @ 40 dB AGC fw = 50 MHz, funw = 60 MHz Xmod 100 105 dBµV Parameter Test condition Symbol Min Typ. Max Unit Forward transadmittance |y21s| 23 28 33 mS Gate 1 input capacitance Cissg1 2.5 3.0 pF Feedback capacitance Crss 20 fF Output capacitance Coss 0.9 pF Power gain GS = 2 mS, BS = BSopt, GL = 0.5 mS, BL = BLopt, f = 200 MHz Gps 32 dB GS = 2 mS, BS = BSopt, GL = 1 mS, BL = BLopt, f = 400 MHz Gps 28 dB GS = 3.3 mS, BS = BSopt, GL = 1 mS, BL = BLopt, f = 800 MHz Gps 22 dB AGC range VDS = 5 V, VG2S = 0.5 to 4 V, f = 200 MHz Gps 50 dB Noise figure GS = GL = 20 mS, BS = BL = 0, f = 50 MHz F 4.5 6.0 dB GS = 2 mS, GL = 1 mS, BS = BSopt, f = 400 MHz F 1.0 1.6 dB GS = 3.3 mS, GL = 1 mS, BS = BSopt, f = 800 MHz F 1.5 2.3 dB Cross modulation Input level for k = 1 % @ 0 dB AGC fw = 50 MHz, funw = 60 MHz Xmod 90 dBµV Input level for k = 1 % @ 40 dB AGC fw = 50 MHz, funw = 60 MHz Xmod 105 dBµV Parameter Test condition Symbol Min Typ. Max Unit |
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