VUC25 datasheet(2/2 Pages) IXYS

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Symbol

Test Conditions

Characteristic Values

Diode

Thyristor

R, ID

R = VRRM; VD = VDRM

VJ = TVJM

5mA

VJ = 25°C

£ 0.3

0.3

F, VT

F = 55 A; IT = 45 A, TVJ = 25°C

£ 2.2

1.5

For power-loss calculations only

1.2

1.1

VJ = 125°C)

11 m

D = 6 V;

VJ = 25°C

1.5

D = 6 V;

VJ = 25°C

VJ = TVJM;VD = 2/3 VDRM

0.2

VJ = TVJM;VD = 2/3 VDRM

5mA

VJ = 25°C; tG = 30 ms

300

G = 0.3 A; diG/dt = 0.3 A/ms

VJ = 25°C; VD = 6 V; RGK = ¥£

100

VJ = 25°C; VD = 1/2 VDRM

2.5

G = 0.3 A; diG/dt = 0.3 A/ms

VJ = 125°C; IT = 15 A, tp = 300 ms, -di/dt = 10 A/ms

typ. 130

R = 100 V, dv/dt = 20 V/ms, VD = 2/3 VDRM

VJ = 25°C; IF = 10 A;

£ 1.5

-di/dt = 10 A/

ms, V

R = 1/2 VRRM

thJC

per thyristor (diode); DC current

2.3

0.9 K/W

per module

0.38

- K/W

thJH

per thyristor (diode); DC current

2.9

1.1 K/W

per module

0.48

- K/W

Creeping distance on surface

7 mm

Creepage distance in air

7 mm

Max. allowable acceleration

50 m/s2

VUC 25

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