Transistors with built-in Resistor

1

Publication date: December 2003

SJH00022BED

Silicon PNP epitaxial planar type

For digital circuits

■ Features

• Costs can be reduced through downsizing of the equipment and

reduction of the number of parts

• S-Mini type package, allowing automatic insertion through the tape/

magazine packing

■ Resistance by Part Number

Marking symbol

• UNR5110 (UN5110)

6L

47 k

Ω

• UNR5111 (UN5111)

6A

10 k

Ω

10 k

Ω

• UNR5112 (UN5112)

6B

22 k

Ω

22 k

Ω

• UNR5113 (UN5113)

6C

47 k

Ω

47 k

Ω

• UNR5114 (UN5114)

6D

10 k

Ω

47 k

Ω

• UNR5115 (UN5115)

6E

10 k

Ω

• UNR5116 (UN5116)

6F

4.7 k

Ω

• UNR5117 (UN5117)

6H

22 k

Ω

• UNR5118 (UN5118)

6I

0.51 k

Ω

5.1 k

Ω

• UNR5119 (UN5119)

6K

1 k

Ω

10 k

Ω

• UNR511D (UN511D)

6M

47 k

Ω

10 k

Ω

• UNR511E (UN511E)

6N

47 k

Ω

22 k

Ω

• UNR511F (UN511F)

6O

4.7 k

Ω

10 k

Ω

• UNR511H (UN511H)

6P

2.2 k

Ω

10 k

Ω

• UNR511L (UN511L)

6Q

4.7 k

Ω

4.7 k

Ω

• UNR511M (UN511M)

EI

2.2 k

Ω

47 k

Ω

• UNR511N (UN511N)

EW

4.7 k

Ω

47 k

Ω

• UNR511T (UN511T)

EY

22 k

Ω

47 k

Ω

• UNR511V (UN511V)

FC

2.2 k

Ω

2.2 k

Ω

• UNR511Z (UN511Z)

FE

4.7 k

Ω

22 k

Ω

■ Absolute Maximum Ratings T

a

= 25°C

Note) The part numbers in the parenthesis show conventional part number.

B

C

E

Internal Connection

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

−50

V

Collector-emitter voltage (Base open)

−50

V

Collector current

−100

mA

Total power dissipation

150

mW

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

0.3

+0.1

–0.0

1

3

2

(0.65) (0.65)

0.15

+0.10

–0.05

10˚

1: Base

2: Emitter

3: Collector

EIAJ: SC-70

SMini3-G1 Package

Unit: mm