ACE5290B datasheet(6/10 Pages) ACE

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ACE5290B

20V Complementary Enhancement Mode Field Effect Transistor

VER 1.1

P-channel Electrical Characteristics TA=25℃, unless otherwise specified.

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = -250μA

-20

Zero Gate Voltage Drain Current

IDSS

VDS = -20V, VGS = 0V

-1

μA

Gate Threshold Voltage

VGS(TH)

VGS = VDS , IDS= -250μA

-0.5

-1

Gate Leakage Current

IGSS

VGS= ±12V , VDS=0V

±100

Drain-Source On-state Resistance

RDS(on)

VGS = -4.5V , ID= -2.8A

mΩ

VGS = -2.5V , ID= -2A

115

VGS = -1.8V , ID= -2A

118

200

Forward Trans Conductance

gFS

VDS= -5V , ID= -2.5A

Diode Forward Voltage

VSD

ISD= -1.6A , VGS= 0V

-0.18

-1.0

Maximum Body-Diode

Continuous Current

-1.6

Switching

Total Gate Charge

VDS= -6V, ID= -2.8A,

VGS= -4.5V

6.6

8.6

Gate-Source Charge

Qgs

0.3

0.4

Gate-Drain Charge

Qgd

1.3

1.7

Turn-on Delay Time

td( on )

VDD= -6V, RL= 6Ω,

ID= -1A,VGS= -4.5V,

RGEN= 6Ω

9.7

19.4

Turn-on Rise Time

3.6

7.1

Turn-off Delay Time

td( off )

70.6

141.2

Turn-off Fall Time

7.8

15.6

Dynamic

Input Capacitance

Ciss

VDS=-6V,VGS= 0V,

f= 1.0MHz

589

Output Capacitance

Coss

91.2

Reverse Transfer Capacitance

Crss

67.2

The value of RθJA is measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still

air environment with TA=25°C. The value in any given application depends on the user's specific

board design.

Repetitive rating, pulse width limited by junction temperature.

The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

ACE5290B Datasheet(PDF) 6 Page - ACE Technology Co., LTD.

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