ACE5290B

20V Complementary Enhancement Mode Field Effect Transistor

VER 1.1

1

Description

The ACE5290B combines advanced trench MOSFET technology with a low resistance package to

Features

N-channel







< 50m

Ω (VGS=4.5V)

< 80mΩ (VGS=2.5V)

P-channel







< 85mΩ (VGS = -4.5V)

< 115mΩ (VGS = -2.5V)

Absolute Maximum Ratings

Parameter

Symbol

N-channel

P-channel

Unit

Drain-Source Voltage

20

-20

V

Gate-Source Voltage

±12

±12

V

Drain Current (Continuous)*AC

3.5

-2.5

A

3

-2

Drain Current (Pulsed)*B

13

-13

A

Power Dissipation

1.1

1.1

W

0.7

0.7

Operating temperature / storage temperature

-55~150

-55~150

℃

B: Repetitive rating, pulse width limited by junction temperature.

C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.