ACE7701A

P-Channel Enhancement Mode MOSFET

VER 1.1

1

Description

The ACE7701A is the P-Channel logic enhancement mode power field effect transistors are produced

using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook

computer power management and other battery powered circuits, and low in-line power loss are needed

in a very small outline surface mount package.

Features

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Exceptional on-resistance and maximum DC current capability

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TSOT-23 package design

Applications

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Power Management in Note book

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Portable Equipment

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Battery Powered System

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DC/DC Converter

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Load Switch



DSC

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LCD Display inverter

Absolute Maximum Ratings

Parameter

Symbol

Typical

Unit

Drain-Source Voltage

-60

V

Gate-Source Voltage

±20

V

-0.5

A

-0.3

Pulsed Drain Current

0.8

A

Power Dissipation

1.25

A

0.8

Operating Junction Temperature

150

W

Storage Temperature Range

-55~150

Thermal Resistance-Junction to Ambient

375