ACE14419T datasheet(2/7 Pages) ACE

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ACE14419T

P-Channel Enhancement Mode Power MOSFET

VER 1.1

Ordering information

ACE14419T XX + H

Electrical Characteristics

TA=25

OC unless otherwise noted

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=-250uA

-30

Zero Gate Voltage Drain Current

IDSS

VDS=-30V, VGS=0V

-1

Gate Threshold Voltage

VGS(th)

VDS=VGS, IDS=-250µA

-1

-1.5

-3

Gate Leakage Current

IGSS

VGS=±20V, VDS=0V

±100

Static Drain-Source On-Resistance

RDS(ON)

VGS=-10V, ID=-9.1A

VGS=-4.5V, ID=-6.9A

Forward Trans Conductance

gFS

VGS=-15V, ID=-9A

Diode Forward Voltage

VSD

ISD=-2.5A, VGS=0V

-1.2

Reverse Recovery Time

trr

IS = -7A,VGS= 0V,

dl/dt=100A/μs

Reverse Recovery Charge

Qrr

Switching

Total Gate Charge

VGS=-10V,VDS=-15V,

ID=-7A,

Gate-Source Charge

Qgs

5.3

Gate-Drain Charge

Qgd

7.9

Turn-On Delay Time

Td(on)

VGS=-10V,VDD=-15V,

ID=-1A ,RGEN=3.3

8.5

Turn-On Rise Time

7.5

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

Dynamic

Input Capacitance

Ciss

VGS=0V,VDS=-15V,

f=1MHz

1530

Output Capacitance

Coss

313

Reverse Transfer Capacitance

Crss

281

Pulse Test: Pulse Width ≤μ300s, Duty Cycle≤ 2.0%

FM: SOP-8

Pb - free

Halogen - free

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