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ACE14419T Datasheet(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE14419T Datasheet(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 7 page  ACE14419T P-Channel Enhancement Mode Power MOSFET VER 1.1 1 Description The ACE14419T uses advanced trench technology to provide excellent RDS, low gate charge and operation with gate voltages as low as 4.5V. RoHS Compliant Halogen Free Features VDS (V) = -30V,ID = -9.1A RDS(ON) <20mΩ @ V GS= -10V RDS(ON )<30mΩ @ V GS= -4.5V SOP-8 Package Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Drain Current (Continuous) TA=25 OC ID -9.1 A TA=70 OC -7.5 Drain Current (Pulse) IDM -50 Power Dissipation TA=25 OC PD 3.1 W Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC Thermal Data Parameter Symbol Value Unit Thermal Resistance Junction-case Rthj-c 24 OC/W Thermal Resistance Junction-ambient Rthj-a 48 OC/W Packaging Type SOP-8 |
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