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MS1505 Datasheet(PDF) 1 Page - Advanced Power Technology |
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MS1505 Datasheet(HTML) 1 Page - Advanced Power Technology |
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1 / 3 page ![]() 053-7086 Rev - 10-2002 MS1505 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS DESCRIPTION: DESCRIPTION: DESCRIPTION: DESCRIPTION: The MS1505 is a 13.6 volt Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. The MS1505 utilizes an emitter ballasted die geometry to withstand severe load VSWR conditions . ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°°°C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 36 V VCEO Collector-Emitter Voltage 18 V VCES Collector-Emitter Voltage 36 V VEBO Emitter-Base Voltage 4.0 V IC Device Current 8.0 A PDISS Power Dissipation 70 W TJ Junction Temperature +200 °°°°C TSTG Storage Temperature -65 to +150 °°°°C Thermal Data Thermal Data Thermal Data Thermal Data RTH(J-C) Junction-case Thermal Resistance 1.2 °°°°C/W Features Features Features Features • 160 MHz • 13.6 VOLTS • POUT = 30 WATTS • GP = 10 dB MINIMUM • COMMON EMITTER CONFIGURATION |
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