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HT45F5Q-2 Datasheet(PDF) 13 Page - Holtek Semiconductor Inc |
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HT45F5Q-2 Datasheet(HTML) 13 Page - Holtek Semiconductor Inc |
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13 / 117 page  Rev. 1.00 1� ���� 0�� �01� Rev. 1.00 13 ���� 0�� �01� HT45F5Q-2 Charger Flash MCU HT45F5Q-2 Charger Flash MCU Memory Characteristics Ta=-40°C~85°C Symbol Parameter Test Conditions Min. Typ. Max. Unit VDD Conditions VRW VDD for Read / Write — — VDDmin — VDDmax V Program Flash / Data EEPROM Memory tDEW Erase / Write C�c�e Time – F�ash Program Memor� — — — � 3 ms Write C�c�e Time – Data EEPROM Memor� — — — 4 � ms IDDPGM Programming / Erase C�rrent on VDD — — — — 5.0 mA EP Ce�� End�rance — — 100K — — E/W tRETD ROM Data Retention time — Ta = �5°C — 40 — Year RAM Data Memory VDR RAM Data Retention vo�tage — Device in SLEEP Mode 1.0 — — V LVR Electrical Characteristics Ta=�5°C Symbol Parameter Test Conditions Min. Typ. Max. Unit VDD Conditions VLVR Low Vo�tage Reset Vo�tage — LVR enab�e -5% �.1 +5% V ILVR Additiona� C�rrent for LVR Enab�e 5V — — — 90 μA tLVR Minim�m Low Vo�tage Width to Reset — — 0.14 0.� 1.0 ms A/D Converter Electrical Characteristics Operating Temperat�re: -40°C~85°C� �n�ess otherwise specif� Symbol Parameter Test Conditions Min. Typ. Max. Unit VDD Conditions VDD A/D Converter Operating Vo�tage — — �.� — 5.5 V VADI A/D Converter Inp�t Vo�tage — — 0 — VREF V VREF A/D Converter Reference Vo�tage — — � — VDD V DNL Differentia� Non-�inearit� 3V VREF = VDD� tADCK = 0.5μs — — ±3 LSB 5V 3V VREF = VDD� tADCK = 10μs 5V INL Integra� Non-�inearit� 3V VREF = VDD� tADCK = 0.5μs — — ±4 LSB 5V 3V VREF = VDD� tADCK = 10μs 5V IADC Additiona� C�rrent for A/D Converter Enab�e 3V No �oad� tADCK = 0.5μs — 1 � mA 5V — 1.5 3 mA tADCK C�ock Period — — 0.5 — 10 μs tON�ST A/D Converter on-to-start Time — — 4 — — μs tADS Samp�ing Time — — — 4 — tADCK tADC Conversion Time (Inc��de A/D Converter Samp�e and Ho�d Time) — — — 1� — tADCK |
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