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BAS21H Datasheet(PDF) 4 Page - NXP Semiconductors |
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BAS21H Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 9 page ![]() 9397 750 14879 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 11 April 2005 4 of 9 Philips Semiconductors BAS21H Single high-voltage switching diode in small SOD123F package (1) Tamb = 150 °C; typical values (2) Tamb =25 °C; typical values (3) Tamb =25 °C; maximum values Based on square wave currents (1) Tj =25 °C; prior to surge Fig 1. Forward current as a function of forward voltage Fig 2. Non-repetitive peak forward current as a function of pulse duration (1) VR = VRmax; maximum values (2) VR = VRmax; typical values Tamb =25 °C; f = 1 MHz Fig 3. Reverse current as a function of junction temperature Fig 4. Diode capacitance as a function of reverse voltage; typical values 600 IF (mA) 0 200 400 mbg384 02 1 VF (V) (1) (3) (2) mbg703 10 1 102 IFSM (A) 10−1 tp (µs) 1104 103 10 102 mbg381 200 0 100 Tj (°C) 10 IR (mA) 1 10−2 102 10−1 (1) (2) mbg447 04 8 6 2 VR (V) 1.0 0.8 0.2 0.6 0.4 Cd (pF) |
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