AP6P070I datasheet(4/6 Pages) A-POWER

Part #	AP6P070I

Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	A-POWER [Advanced Power Electronics Corp.]

Direct Link	http://www.a-power.com.tw

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4 / 6 page

AP6P070I

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

Fig 11. Typical Power Dissipation

Fig 12. Gate Charge Waveform

-10V

QGS

QGD

Charge

10203040

Q G , Total Gate Charge (nC)

V DS = -30 V

I D = - 10 A

1000

2000

3000

4000

2141

6181

-V DS , Drain-to-Source Voltage (V)

f=1.0MHz

C iss

C oss

C rss

0.001

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

t , Pulse Width (s)

PDM

Duty factor = t/T

Peak Tj = PDM x Rthjc + TC

0.02

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

0.1

100

0.1

100

-V DS , Drain-to-Source Voltage (V)

T C =25

o C

Single Pulse

100us

1ms

10ms

100ms

Operation in this

area limited by

RDS(ON)

100

150

T C , Case Temperature (

o C )

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