BC847AT datasheet(3/6 Pages) DIODES

3 / 6 page

BC847AT, BT, CT

Document number: DS30274 Rev. 10 - 2

3 of 6

www.diodes.com

September 2016

BC847AT, BT, CT

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Collector-Base Breakdown Voltage

BVCBO





IC = 10µA, IE = 0

Collector-Emitter Breakdown Voltage

BVCEO





IC = 1mA, IB = 0

Emitter-Base Breakdown Voltage

BVEBO

6.0





IE = 10µA, IC = 0

ON CHARACTERISTICS (Note 7)

DC Current Gain

Current Gain A

hFE

110

200

420



290

520

220

450

800





VCE = 5.0V, IC = 2.0mA

Collector-Emitter Saturation Voltage

VCE(SAT)



250

600

IC = 10mA, IB = 0.5mA

IC = 100mA, IB = 5mA

Base-Emitter Saturation Voltage

VBE(SAT)



700

900



IC = 10mA, IB = 0.5mA

IC = 100mA, IB = 5mA

Base-Emitter Voltage

VBE

580

—

660

—

700

770

VCE = 5.0V, IC = 2.0mA

VCE = 5.0V, IC = 10mA

Collector-Emitter Cutoff Current

ICBO

—

5.0

µA

VCB = 30V

VCB = 30V, TA = +150°C

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

COBO



4.5

VCB = 10V, f = 1.0MHz

Current Gain-Bandwidth Product

100



MHz

VCE = 5V, IC = 10 A,

f = 100MHz

Noise Figure

BC847BT

BC847CT



1.0

4.0

VCE = 5V, RS = 2kΩ,

f = 1MHz, BW = 200Hz

Note:

Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

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