MB90351APMC datasheet(76/83 Pages) CYPRESS

76 / 83 page

Document Number: 002-07872 Rev. *A

Page 76 of 83

MB90350 Series

15.7 Flash Memory Program/Erase Characteristics

Flash Memory

* : This value comes from the technology qualification.

(Using Arrhenius equation to translate high temperature measurements into normalized value at

85 °C)

Dual Operation Flash Memory

* : This value comes from the technology qualification.

(Using Arrhenius equation to translate high temperature measurements into normalized value at

85 °C)

Parameter

Conditions

Value

Unit

Remarks

Min

Typ

Max

Sector erase time

TA  25 °C

VCC  5.0 V

—1

Excludes programming prior to

erasure

Chip erase time

—

Excludes programming prior to

erasure

Word (16-bit width)

programming time

—16

3,600

μs

Except for the overhead time of

the system level

Program/Erase cycle

—

10,000

—

cycle

Flash Memory Data

Retention Time

Average

TA  85 °C

—

year

Parameter

Conditions

Value

Unit

Remarks

Min

Typ

Max

Sector erase time

(4 Kbytes sector)

TA  25 °C

VCC  5.0 V

—0.2

0.5

Excludes programming prior to

erasure

Sector erase time

(16 Kbytes sector)

—0.5

7.5

Excludes programming prior to

erasure

Chip erase time

—

4.6

—

Excludes programming prior to

erasure

Word (16-bit width)

programming time

—

3,600

μs

Except for the overhead time of

the system level

Program/Erase cycle

—

10,000

—

cycle

Flash Memory Data

Retention Time

Average

TA  85 °C

—

year

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