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DG418LE Datasheet(PDF) 2 Page - Vishay Siliconix |
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DG418LE Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 15 page ![]() DG417LE, DG418LE, DG419LE www.vishay.com Vishay Siliconix S18-0271-Rev. B, 12-Mar-18 2 Document Number: 76432 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes a. Signals on NC, NO, COM, or IN exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings b. All leads welded or soldered to PC board c. Derate 6.5 mW/°C above 25 °C ABSOLUTE MAXIMUM RATINGS PARAMETER LIMIT UNIT V+ to V- -0.3 to +18 V GND to V- 18 VL (GND - 0.3) to (V+) + 0.3 IN, COM, NC, NO a -0.3 to (V+ + 0.3) or 30 mA, whichever occurs first Continuous current (any terminal) 30 mA Peak current, S or D (pulsed 1 ms, 10 % duty cycle) 100 Storage temperature (DQ, DY suffix) -65 to +150 °C Power dissipation (packages) b 8-pin MSOP c 320 mW 8-pin SOIC c 400 ESD / HBM EIA / JESD22-A114-A 2K V ESD / CDM EIA / JESD22-C101-A 750 Latch up JESD78 300 mA |
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