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GSD2004WS Datasheet(PDF) 2 Page - Vishay Siliconix |
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GSD2004WS Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 2 page  GSD2004WS Vishay Semiconductors formerly General Semiconductor www.vishay.com Document Number 88202 2 14-May-02 Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Unit Reverse Breakdown Voltage VBR IR = 100 µA 300 —— V Leakage Current IR VR = 240V —— 100 nA VR = 240V, Tj = 150°C —— 100 µA Forward Voltage VF IF = 20mA — 0.83 0.87 V IF = 100mA —— 1.00 Capacitance Ctot VF = VR = 0 —— 5.0 pF f = 1MHz Reverse Recovery Time trr IF = IA = 30mA —— 50 ns Irr = 3.0mA, RL = 100 Ω Note: (1 )Device on fiberglass substrate, see layout |
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