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IRF740 Datasheet(PDF) 4 Page - Vishay Siliconix |
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IRF740 Datasheet(HTML) 4 Page - Vishay Siliconix |
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4 / 9 page ![]() www.vishay.com Document Number: 91054 4 S11-0507-Rev. C, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF740, SiHF740 Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area C iss C rss C oss V GS = 0 V, f = 1 MHz C iss = Cgs + Cgd, Cds Shorted C rss = Cgd C oss = Cds + Cgd 91054_05 2500 2000 1500 1000 0 500 100 101 VDS, Drain-to-Source Voltage (V) 91054_06 I D = 10 A V DS = 200 V For test circuit see figure 13 V DS = 80 V V DS = 320 V QG, Total Gate Charge (nC) 20 16 12 8 0 4 0 15 75 60 45 30 91054_07 101 100 VSD, Source-to-Drain Voltage (V) 0.50 1.10 0.90 0.70 1.50 1.30 25 °C 150 °C V GS = 0 V 10-1 91054_08 10 µs 100 µs 1 ms 10 ms Operation in this area limited by R DS(on) T C = 25 °C T J = 150 °C Single Pulse 103 2 5 1 2 5 2 5 2 5 VDS, Drain-to-Source Voltage (V) 0.1 1 10 102 103 25 2 5 2 5 25 0.1 10 102 |
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