IRF740 datasheet(2/9 Pages) VISHAY

2 / 9 page

www.vishay.com

Document Number: 91054

S11-0507-Rev. C, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF740, SiHF740

Vishay Siliconix

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

≤ 300 μs; duty cycle ≤ 2 %.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

-62

°C/W

Case-to-Sink, Flat, Greased Surface

RthCS

0.50

Maximum Junction-to-Case (Drain)

RthJC

-1.0

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

400

VDS Temperature Coefficient

ΔVDS/TJ

Reference to 25 °C, ID = 1 mA

0.49

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

4.0

Gate-Source Leakage

IGSS

VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 400 V, VGS = 0 V

μA

VDS = 320 V, VGS = 0 V, TJ = 125 °C

250

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 6.0 Ab

0.55

Forward Transconductance

gfs

VDS = 50 V, ID = 6.0 Ab

5.8

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5

1400

Output Capacitance

Coss

330

Reverse Transfer Capacitance

Crss

120

Total Gate Charge

VGS = 10 V

ID = 10 A, VDS = 320 V,

see fig. 6 and 13b

Gate-Source Charge

Qgs

9.0

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDD = 200 V, ID = 10 A

Rg = 9.1

Ω, RD = 20 Ω, see fig. 10b

-14

Rise Time

-27

Turn-Off Delay Time

td(off)

-50

Fall Time

-24

Internal Drain Inductance

Between lead,

6 mm (0.25") from

package and center of

die contact

-4.5

Internal Source Inductance

-7.5

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

Pulsed Diode Forward Currenta

ISM

Body Diode Voltage

VSD

TJ = 25 °C, IS = 10 A, VGS = 0 Vb

2.0

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μsb

370

790

Body Diode Reverse Recovery Charge

Qrr

3.8

8.2

μC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

IRF740 Datasheet(PDF) 2 Page - Vishay Siliconix

IRF740 Datasheet(HTML) 2 Page - Vishay Siliconix

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Download

Link URL