ADF4216 datasheet(4/20 Pages) AD

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REV. 0

ADF4216/ADF4217/ADF4218

–4–

TIMING CHARACTERISTICS

Limit at

TMIN to TMAX

Parameter

(B Version)

Unit

Test Conditions/Comments

ns min

DATA to CLOCK Setup Time

ns min

DATA to CLOCK Hold Time

ns min

CLOCK High Duration

ns min

CLOCK Low Duration

ns min

CLOCK to LE Setup Time

ns min

LE Pulsewidth

NOTES

Guaranteed by design but not production tested.

Speciﬁcation subject to change without notice.

CLOCK

DATA

DB21 (MSB)

DB20

DB2

DB1

(CONTROL BIT C2)

DB0 (LSB)

(CONTROL BIT C1)

Figure 1. Timing Diagram

(VDD1 = VDD2 = 3 V

10%, 5 V

10%; VP1, VP2 = VDD , 5 V

10%; AGND = DGND = 0 V;

TA = TMIN to TMAX unless otherwise noted.)

ABSOLUTE MAXIMUM RATINGS

1, 2

(TA = 25

°C unless otherwise noted)

VDD1 to GND

. . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V

VDD1 to VDD2 . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +0.3 V

VP1, VP2 to GND . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V

VP1, VP2 to VDD1 . . . . . . . . . . . . . . . . . . . . –0.3 V to +5.5 V

Digital I/O Voltage to GND . . . . . . –0.3 V to DVDD + 0.3 V

Analog I/O Voltage to GND . . . . . . . . . –0.3 V to VP + 0.3 V

REFIN, RFINA, RFINB,

IFINA, IFINB to GND . . . . . . . . . . . –0.3 V to VDD + 0.3 V

Operating Temperature Range

Industrial (B Version) . . . . . . . . . . . . . . . . –40

°C to +85°C

Storage Temperature Range . . . . . . . . . . . . –65

°C to +150°C

Maximum Junction Temperature . . . . . . . . . . . . . . . . 150

°C

TSSOP

JA Thermal Impedance

. . . . . . . . . . . . . 150.4

°C/W

Lead Temperature, Soldering

Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . 215

°C

Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220

°C

NOTES

1Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the

device at these or any other conditions above those listed in the operational

sections of this speciﬁcation is not implied. Exposure to absolute maximum rating

conditions for extended periods may affect device reliability.

2This device is a high-performance RF integrated circuit with an ESD rating of

< 2 kV and it is ESD sensitive. Proper precautions should be taken for handling

and assembly.

3GND = AGND = DGND = 0 V.

TRANSISTOR COUNT

11749 (CMOS) and 522 (Bipolar).

ORDERING GUIDE

Model

Temperature Range

Package Description

Package Option

ADF4216BRU

–40

°C to +85°C

Thin Shrink Small Outline Package (TSSOP)

RU-20

ADF4217BRU

–40

°C to +85°C

Thin Shrink Small Outline Package (TSSOP)

RU-20

ADF4218BRU

–40

°C to +85°C

Thin Shrink Small Outline Package (TSSOP)

RU-20

*Contact the factory for chip availability.

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily

accumulate on the human body and test equipment and can discharge without detection. Although

the ADF4216/ADF4217/ADF4218 features proprietary ESD protection circuitry, permanent

damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper

ESD precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

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