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IRLR8103/IRLR8503

Parameter

Min

Typ

Max

Min

Typ

Max Units

Conditions

Diode Forward

V

SD

–

–

0.9

–

–

1.0

V

I

Voltage*

Reverse Recovery

Q

rr

–

100

–

–

89

–

di/dt ~ 700A/µs

nC

V

Reverse Recovery

Q

rr(s)

–

77

–

–

75

–

di/dt = 700A/µs

Charge (with Parallel

(with 10BQ040)

Schottky)

„

V

Parameter

Min

Typ

Max

Min

Typ

Max Units

Conditions

Drain-to-Source

BV

DSS

30

––30

–

–

V

V

Breakdown Voltage*

Static Drain-Source

R

DS(ON)

–

6

7.0

12

16

m

Ω V

on Resistance*

–

7

8.5

14

18

m

Ω V

Gate Threshold Voltage*

V

GS(th)

2.0

–

–

1.0

–

–

V

V

Drain-Source Leakage

I

DSS

–

–

30

–

–

30

V

Current*

–

–

150

–

–

150

µA

V

Tj = 100°C

Gate-Source Leakage

I

GSS

–

–

±100

–

–

±100

nA

V

Current*

Total Gate Chg Cont FET*

Q

G

–

50–

–15–

V

Total Gate Chg Sync FET*

Q

G

–

45–

–13–

V

Pre-Vth

Q

GS1

–

17

–

–

3.7

–

V

Gate-Source Charge

Post-Vth

Q

GS2

–

4.3

–

–

1.3

–

nC

Gate-Source Charge

Gate to Drain Charge

Q

GD

–

16

–

–

4.1

–

Switch Chg(Q

Q

sw

–

20.3

–

–

5.4

–

Output Charge*

Q

oss

–

23–

–23–

V

Gate Resistance

R

G

–

1.5

–

–

2.0

–

Ω

Turn-on Delay Time

t

–

TBD

–

–

TBD

–

V

Rise Time

t

r

–

TBD

–

–

TBD

–

ns

V

Turn-off Delay Time

t

–

TBD

–

–

TBD

–

Clamped Inductive Load

Fall Time

t

f

–

TBD

–

–

TBD

–

See test diagram Fig 19.

Input Capacitance

C

iss

–

TBD

–

–

TBD

–

Output Capacitance

C

oss

–

TBD

–

–

TBD

–

pF

V

Reverse Transfer Capacitance C

rss

–

TBD

–

–

TBD

–

Electrical Characteristics

Source-Drain Rating & Characteristics

IRLR8103

IRLR8503

Charge

„

Notes:



Repetitive rating; pulse width limited by max. junction temperature.

‚

Pulse width

≤ 300 µs; duty cycle ≤ 2%.

ƒ

When mounted on 1 inch square copper board, t < 10 sec.

„

Typ = measured - Q

oss

… Calculated continuous current based on maximum allowable

Junction temperature; packagle limitation current = 20A

*

Devices are 100% tested to these parameters.