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SSM02N60P Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers

Part # SSM02N60P
Description  N CHANNEL ENHANCEMENT MODE
PDF  6 Pages
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SSM02N60P Datasheet(HTML) 1 Page - List of Unclassifed Manufacturers

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SSM02N60P
N-CHANNEL ENHANCEMENT-MODE
POWER MOSFET
Repetitive-avalanche rated
BVDSS
600V
Fast-switching
RDS(ON)
8Ω
Simple drive requirement
ID
2A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
Drain-Source Voltage
V
VGS
Gate-Source Voltage
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
1
A
PD@TC=25℃
Total Power Dissipation
W
W/℃
EAS
Single Pulse Avalanche Energy
2
mJ
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
mJ
TSTG
℃
TJ
Operating Junction Temperature Range
℃
Thermal Data
Symbol
Value
Unit
Rthj-c
Thermal Resistance Junction-case
Max.
3.2
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
℃/W
130
-55 to 150
Parameter
2
2
1.26
Parameter
Rating
600
Storage Temperature Range
-55 to 150
6
39
Linear Derating Factor
0.31
2
± 20
G
D
S
G
D
S
TO-220
The TO-220 package is widely preferred for commercial and industrial
applications. The SSM02N60P is well suited for DC/DC and AC/DC
converters in telecom, industrial and consumer applications.
Rev.2.01 6/06/2003


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