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1 / 6 page ![]() www.SiliconStandard.com 1 of 6 SSM02N60P N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Repetitive-avalanche rated BVDSS 600V Fast-switching RDS(ON) 8Ω Simple drive requirement ID 2A Description Absolute Maximum Ratings Symbol Units VDS Drain-Source Voltage V VGS Gate-Source Voltage V ID@TC=25℃ Continuous Drain Current, VGS @ 10V A ID@TC=100℃ Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current 1 A PD@TC=25℃ Total Power Dissipation W W/℃ EAS Single Pulse Avalanche Energy 2 mJ IAR Avalanche Current A EAR Repetitive Avalanche Energy mJ TSTG ℃ TJ Operating Junction Temperature Range ℃ Thermal Data Symbol Value Unit Rthj-c Thermal Resistance Junction-case Max. 3.2 ℃/W Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W 130 -55 to 150 Parameter 2 2 1.26 Parameter Rating 600 Storage Temperature Range -55 to 150 6 39 Linear Derating Factor 0.31 2 ± 20 G D S G D S TO-220 The TO-220 package is widely preferred for commercial and industrial applications. The SSM02N60P is well suited for DC/DC and AC/DC converters in telecom, industrial and consumer applications. Rev.2.01 6/06/2003 |
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