Schottky Barrier Diodes (SBD)

1

Publication date: August 2001

SKH00037AED

Silicon epitaxial planar type

For super high speed switching

For small current rectification

I Features

• High-density mounting is possible

• I

• Optimum for high frequency rectification because of its short

• Low forward voltage V

• S-Mini type 2-pin package

I Absolute Maximum Ratings T

a

= 25°C

Marking Symbol: 2D

Parameter

Symbol

Rating

Unit

Reverse voltage (DC)

30

V

Repetitive peak reverse-voltage

30

V

Peak forward current

300

mA

Average forward current

100

mA

Non-repetitive peak forward-s

1A

Junction temperature

125

°C

Storage temperature

−55 to +125

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse current (DC)

15

µA

Forward voltage (DC)

= 100 mA

0.55

V

Terminal capacitance

= 0 V, f = 1 MHz

20

pF

= I

R

= 100 mA

2.0

ns

= 10 mA, R

L

= 100 Ω

I Electrical Characteristics T

Bias Application Unit N-50BU

90%

Pulse Generator

(PG-10N)

R

Wave Form Analyzer

(SAS-8130)

R

t

t

δ = 0.05

I

I

R

10%

Input Pulse

Output Pulse

I

t

r

t

p

t

rr

V

R

I

F

t

t

A

Unit: mm

1 : Anode

2 : Cathode

EIAJ : SC-90A

SMini2-F1 Package

5

°

0.16

1

2

+0.1

–0.06

0 to 0.1

Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)

Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body

and the leakage of current from the operating equipment.

2. Rated input/output frequency: 250 MHz

Note) The part number in the parenthesis shows conventional part number.