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RM3010 Datasheet(PDF) 1 Page - Rectron Semiconductor

Part # RM3010
Description  N-Channel Enhancement Mode Power MOSFET
PDF  7 Pages
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Manufacturer  RECTRON [Rectron Semiconductor]
Direct Link  http://www.rectron.com
Logo RECTRON - Rectron Semiconductor

RM3010 Datasheet(HTML) 1 Page - Rectron Semiconductor

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N-Channel Enhancement Mode Power MOSFET
Description
The RM3010 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =30V,ID =10A
RDS(ON) < 12m
@ VGS=10V
RDS(ON) <16m
@ VGS=4.5V
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Application
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
Schematic diagram
Marking and pin assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
3010
RM3010
SOP-8
Ø330mm
12mm
2500 units
Absolute Maximum Ratings (TA=25
unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
Drain Current-Continuous
ID
10
A
Drain Current-Continuous(TC=100
)
ID (100
)
6
A
Pulsed Drain Current
IDM
50
A
Maximum Power Dissipation
PD
2.5
W
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
Thermal Characteristic
Thermal Resistance,Junction-to-Case
(Note 2)
R JC
50
/W
RM3010
2016-09
REV:O15


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