unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

30

33

-

V

Zero Gate Voltage Drain Current

-

-

1

A

Gate-Body Leakage Current

-

-

±100

nA

On Characteristics

(Note 3)

Gate Threshold Voltage

1

1.6

3

V

-

8

12

Drain-Source On-State Resistance

-

11

16

m

Forward Transconductance

15

-

-

S

Dynamic Characteristics

(Note4)

Input Capacitance

-

1550

-

PF

Output Capacitance

-

300

-

PF

Reverse Transfer Capacitance

F=1.0MHz

-

180

-

PF

Switching Characteristics

(Note 4)

Turn-on Delay Time

-

30

-

nS

Turn-on Rise Time

-

20

-

nS

Turn-Off Delay Time

-

100

-

nS

Turn-Off Fall Time

-

80

-

nS

Total Gate Charge

-

13

-

nC

Gate-Source Charge

-

5.5

-

nC

Gate-Drain Charge

-

3.5

-

nC

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

-

-

1.2

V

Diode Forward Current

(Note 2)

-

-

10

A

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ” 10 sec.

3. Pulse Test: Pulse Width ” 300 s, Duty Cycle ” 2%.

4. Guaranteed by design, not subject to production