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HAB709A Datasheet(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

Part # HAB709A
Description  GENERAL PURPOSE TRANSISTOR
PDF  4 Pages
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Manufacturer  HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]
Direct Link  http://www.hottech.net.cn/
Logo HOTTECH - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

HAB709A Datasheet(HTML) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

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©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
E-mail:hkt@heketai.com
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HAB709A(PNP)
GENERAL PURPOSE TRANSISTOR
REPLACEMENT TYPE :2SB709A
FEATURES
For General Amplification
Complementary to HAD601A
MAXIMUM RATINGS (TA= 25°C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted)
Parameter
Symbol Test conditions
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
VCBO
IC=-10μA,IE=0
-45
V
Collector-Emitter Breakdown Voltage
VCEO
IC=-2mA,IB=0
-45
V
Emitter-Base Breakdown Voltage
VEBO
IE=-10uA,IC=0
-7
V
Collector Cut-off Current
ICBO
VCB=-20V,IE=0
-0.1
μA
Collector Cut-off Current
ICEO
VCE=-10V, IB=0
-100
μA
DC Current Gain
hFE
VCE=-10V,IC=-2mA
160
460
Collector-Emitter Saturation Voltage
VCE(sat)
IC=-100mA,IB=-10mA
-0.5
V
Transition Frequency
fT
VCE=-10V,IC=-1mA,f=200MHz
60
MHz
Collector Output Capacitance
COB
VCB=-10V, IE=0,f=1MHz
2.7
pF
Rank
Q
R
S
Range
160-260
210-340
290-460
Marking
BQ1
BR1
BS1
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-45
V
Collector-Emitter Voltage
VCEO
-45
V
Emitter-Base Voltage
VEBO
-7
V
Collector Current-Continuous
IC
-100
mA
Collector Power Dissipation
PC
200
mW
Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
-55-150
°C
SOT-23
CLASSIFICATION OF hFE
1: BASE
2:EMITTER
3: COLLECTOR


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