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LTM4677 Datasheet(PDF) 16 Page - Linear Technology |
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LTM4677 Datasheet(HTML) 16 Page - Linear Technology |
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16 / 34 page ![]() LTM4647 16 4647fb For more information www.linear.com/LTM4647 APPLICATIONS INFORMATION The LTM4647 accomplishes this by disabling both the top and bottom MOSFETs until the TRACK/SS pin voltage and theinternalsoft-startvoltageareabovetheVFBpinvoltage. N+1 Phase Redundancy and Hot Swap The HIZB pin can be used to force both top and bottom MOSFET to turn off while not pulling down the COMPa and TRACK/SS pins. In a multiphase system N+1 redundancy can be achieved via the HIZB pin. When combined with a hot swap controller, such as the LTC4211, the HIZB pin could be connected to the gate of the hot swap switch. When a damaged MOSFET triggers the hot swap control- ler, it also disables the corresponding channel’s power, disconnecting it. Since COMPa and TRACK/SS pins are unaffected, it does not affect the rest of the system. The propagationdelayfromHIZBfallingtobothtopandbottom MOSFET turned off is <200ns. See Figure 27 for example. SW Pins and Snubbering Circuit The SW pin is generally for testing purposes by monitor- ing the pin. The SW pin can also be used to dampen out switch node ringing caused by LC parasitic in the switched current path. Usually a series R-C combination is used called a snubber circuit. The resistor will dampen the resonance and the capacitor is chosen to only affect the high frequency ringing across the resistor. If the stray inductance or capacitance can be measured or approximated then a somewhat analytical technique can be used to select the snubber values. The inductance is usually easier to predict. It combines the power path board inductance in combination with the MOSFET interconnect bond wire inductance. First the SW pin can be monitored with a wide bandwidth scope with a high frequency scope probe. The ring fre- quency can be measured for its value. The impedance Z can be calculated: ZL = 2π • f • L where f is the resonant frequency of the ring, and L is the total parasitic inductance in the switch path. If a resistor is selected that is equal to Z, then the ringing should be dampened. The snubber capacitor value is chosen so that its impedance is equal to the resistor at the ring frequency. Calculated by: ZC = 1 2π • f •C These values are a good place to start. Modification to these components should be made to attenuate the ring- ing with the least amount the power loss. Stability Compensation The LTM4647 has already been internally optimized and compensated for all output voltages and capacitor combi- nations including all ceramic capacitor applications when COMPb is tied to COMPa. Please note that a 22pF to 47pF feedforward capacitor (CFF) is required connecting from VOUT to VFB pin for all ceramic capacitor application to achieve high bandwidth control loop compensation with enough phase margin. Table 5 is provided for most application requirements using the optimized internal compensation. For specific optimized requirement, dis- connect COMPb from COMPa and apply a Type II C-R-C compensation network from COMPa to SGND to achieve external compensation. The LTpowerCAD design tool is available to download online to perform specific control loop optimization and analyze the control stability and load transient performance. SVIN, PVIN, INTVCC AND DRVCC SVIN is the filtered input voltage to the internal 5.5V LDO regulator to power the control circuitry of the regulator. Connect SVIN to VIN through a 2.2Ω and 1µF R-C filter. INTVCC is the output of the 5.5V LDO. Decouple it with a minimum 2.2µF ceramic capacitor. Connect INTVCC to SVIN directly if SVIN is less than 6V. PVIN is the power input connected to power MOSFETs and the DRVCC is the supply voltage for the driver circuity to drive both power MOSFETs. DRVCC could connect to an |
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