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LTM4677 Datasheet(PDF) 16 Page - Linear Technology

Part # LTM4677
Description  30A DC/DC Step-Down 關Module Regulator
PDF  34 Pages
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Manufacturer  LINER [Linear Technology]
Direct Link  http://www.linear.com
Logo LINER - Linear Technology

LTM4677 Datasheet(HTML) 16 Page - Linear Technology

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LTM4647
16
4647fb
For more information www.linear.com/LTM4647
APPLICATIONS INFORMATION
The LTM4647 accomplishes this by disabling both the top
and bottom MOSFETs until the TRACK/SS pin voltage and
theinternalsoft-startvoltageareabovetheVFBpinvoltage.
N+1 Phase Redundancy and Hot Swap
The HIZB pin can be used to force both top and bottom
MOSFET to turn off while not pulling down the COMPa and
TRACK/SS pins. In a multiphase system N+1 redundancy
can be achieved via the HIZB pin. When combined with a
hot swap controller, such as the LTC4211, the HIZB pin
could be connected to the gate of the hot swap switch.
When a damaged MOSFET triggers the hot swap control-
ler, it also disables the corresponding channel’s power,
disconnecting it. Since COMPa and TRACK/SS pins are
unaffected, it does not affect the rest of the system. The
propagationdelayfromHIZBfallingtobothtopandbottom
MOSFET turned off is <200ns. See Figure 27 for example.
SW Pins and Snubbering Circuit
The SW pin is generally for testing purposes by monitor-
ing the pin. The SW pin can also be used to dampen out
switch node ringing caused by LC parasitic in the switched
current path. Usually a series R-C combination is used
called a snubber circuit. The resistor will dampen the
resonance and the capacitor is chosen to only affect the
high frequency ringing across the resistor.
If the stray inductance or capacitance can be measured or
approximated then a somewhat analytical technique can
be used to select the snubber values. The inductance is
usually easier to predict. It combines the power path board
inductance in combination with the MOSFET interconnect
bond wire inductance.
First the SW pin can be monitored with a wide bandwidth
scope with a high frequency scope probe. The ring fre-
quency can be measured for its value. The impedance Z
can be calculated:
ZL = 2π • f • L
where f is the resonant frequency of the ring, and L is the
total parasitic inductance in the switch path. If a resistor
is selected that is equal to Z, then the ringing should be
dampened. The snubber capacitor value is chosen so that
its impedance is equal to the resistor at the ring frequency.
Calculated by:
ZC =
1
2π • f •C
These values are a good place to start. Modification to
these components should be made to attenuate the ring-
ing with the least amount the power loss.
Stability Compensation
The LTM4647 has already been internally optimized and
compensated for all output voltages and capacitor combi-
nations including all ceramic capacitor applications when
COMPb is tied to COMPa. Please note that a 22pF to
47pF feedforward capacitor (CFF) is required connecting
from VOUT to VFB pin for all ceramic capacitor application
to achieve high bandwidth control loop compensation
with enough phase margin. Table 5 is provided for most
application requirements using the optimized internal
compensation. For specific optimized requirement, dis-
connect COMPb from COMPa and apply a Type II C-R-C
compensation network from COMPa to SGND to achieve
external compensation. The LTpowerCAD design tool is
available to download online to perform specific control
loop optimization and analyze the control stability and load
transient performance.
SVIN, PVIN, INTVCC AND DRVCC
SVIN is the filtered input voltage to the internal 5.5V LDO
regulator to power the control circuitry of the regulator.
Connect SVIN to VIN through a 2.2Ω and 1µF R-C filter.
INTVCC is the output of the 5.5V LDO. Decouple it with
a minimum 2.2µF ceramic capacitor. Connect INTVCC to
SVIN directly if SVIN is less than 6V.
PVIN is the power input connected to power MOSFETs and
the DRVCC is the supply voltage for the driver circuity to
drive both power MOSFETs. DRVCC could connect to an



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