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HT82V735 Datasheet(PDF) 2 Page - Holtek Semiconductor Inc |
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HT82V735 Datasheet(HTML) 2 Page - Holtek Semiconductor Inc |
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2 / 9 page ![]() Absolute Maximum Ratings Supply Voltage .............................VSS -0.3V to VSS+6V Storage Temperature ........................... -50°Cto125°C Input Voltage .............................VSS -0.3V to VDD+0.3V Operating Temperature .......................... -20°Cto70°C Note: These are stress ratings only. Stresses exceeding the range specified under ²Absolute Maximum Ratings² may cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliabil- ity. Electrical Characteristics VSS=0V; fi=1kHz; RL=32 W; Ta=25°C Symbol Parameter Test Conditions Min. Typ. Max. Unit VDD Conditions Supplies VDD Supply Voltage ¾¾ 2.4 ¾ 6V IDD Supply Current 5V No load ¾ 10 ¾ mA IPD Power-down Current 5V ¾¾ 1 ¾mA D.C. Characteristics VI(OS) Input Offset Voltage 5V ¾¾ 10 ¾ mV IO Maximum Output Current 5V (THD+N)/S<0.1% ¾ 62 ¾ mA RO Output Resistance 5V ¾¾ 230 ¾ m W VO Output Voltage Swing 5V RL=8 W 0.66 ¾ 3V RL=16 W 0.38 ¾ 3.15 V RL=32 W 0.18 ¾ 3.29 V PSRR Power Supply Rejection Ratio 5V CS=2.2 mF, VRIPPLE=200VRMS, f=120Hz ¾ 66 ¾ dB XTALK Channel Separation 5V PO=200mW, RL=8 W, CB=2.2 mF ¾ 85 ¾ dB A.C. Characteristics (THD+N)/S Total Harmonic Distortion Plus Noise to Signal Ratio 5V PO=200mW, RL=8 W, f=1kHz ¾ 0.03 ¾ % PO=120mW, RL=16 W, f=1kHz ¾ 0.01 ¾ PO=75mW, RL=32 W, f=1kHz ¾ 0.01 ¾ 3.3V PO=30mW, RL=32 W, f=1kHz ¾ 0.01 ¾ PO Output Power 5V (THD+N)/S=0.1%, f=1kHz ¾¾¾ mW RL=8 W¾ 240 ¾ RL=16 W¾ 160 ¾ RL=32 W¾ 90 ¾ (THD+N)/S=10%, f=1kHz ¾¾¾ RL=8 W¾ 330 ¾ RL=16 W¾ 200 ¾ RL=32 W¾ 110 ¾ HT82V735 Rev. 1.10 2 February 18, 2004 |
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