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LT3758 Datasheet(PDF) 13 Page - Linear Technology |
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LT3758 Datasheet(HTML) 13 Page - Linear Technology |
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13 / 20 page ![]() LTC3872-1 13 38721f For more information www.linear.com/LTC3872-1 Input Capacitor Selection The input capacitor of a boost converter is less critical than the output capacitor, due to the fact that the inductor is in series with the input and the input current waveform is continuous (see Figure 6b). The input voltage source impedance determines the size of the input capacitor, which is typically in the range of 10µF to 100µF. A low ESR capacitor is recommended, although it is not as critical as for the output capacitor. The RMS input capacitor ripple current for a boost con- verter is: IRMS(CIN) =0.3• VIN(MIN) L • f •DMAX Please note that the input capacitor can see a very high surge current when a battery is suddenly connected to the input of the converter and solid tantalum capacitors can fail catastrophically under these conditions. Be sure to specify surge-tested capacitors! Efficiency Considerations: How Much Does VDS Sensing Help? Theefficiencyofaswitchingregulatorisequaltotheoutput power divided by the input power ( ×100%). Percent efficiency can be expressed as: % Efficiency = 100% – (L1 + L2 + L3 + …), where L1, L2, etc. are the individual loss components as a percentage of the input power. It is often useful to analyze individuallossestodeterminewhatislimitingtheefficiency and which change would produce the most improvement. Although all dissipative elements in the circuit produce losses, four main sources usually account for the majority of the losses in LTC3872-1 application circuits: 1. The supply current into VIN. The VIN current is the sum of the DC supply current IQ (given in the Electrical Characteristics) and the MOSFET driver and control cur- rents. The DC supply current into the VIN pin is typically about 250µA and represents a small power loss (much less than 1%) that increases with VIN. The driver current results from switching the gate capacitance of the power MOSFET; this current is typically much larger than the DC current. Each time the MOSFET is switched on and then off, a packet of gate charge QG is transferred from VIN to ground. The resulting dQ/dt is a current that must be supplied to the Input capacitor by an external supply. If the IC is operating in CCM: IQ(TOT) ≈ IQ = f • QG PIC = VIN • (IQ + f • QG) 2. Power MOSFET switching and conduction losses. The technique of using the voltage drop across the power MOSFET to close the current feedback loop was chosen because of the increased efficiency that results from not having a sense resistor. The losses in the power MOSFET are equal to: PFET = IO(MAX) 1– DMAX 2 •RDS(ON) •DMAX • ρT + k • VO 1.85 • IO(MAX) 1– DMAX • CRSS • f TheI2Rpowersavingsthatresultfromnothavingadiscrete sense resistor can be calculated almost by inspection. PR(SENSE) = IO(MAX) 1– DMAX 2 •RSENSE •DMAX To understand the magnitude of the improvement with this VDS sensing technique, consider the 3.3V input, 5V output power supply shown in the Typical Application on thefrontpage.Themaximumloadcurrentis7A(10Apeak) and the duty cycle is 39%. Assuming a ripple current of 40%, the peak inductor current is 13.8A and the average applicaTions inForMaTion Figure 7. Load Transient Response for a 3.3V Input, 5V Output Boost Converter Application, 0.1A to 1A Step ILOAD 500mA/DIV VOUT 200mV/DIV AC-COUPLED 20µs/DIV 38721 F07 |
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