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C1227 Datasheet(PDF) 2 Page - IMP, Inc

Part # C1227
Description  HV BiCMOS 1.2mm 30V Double Metal - Double Poly
PDF  2 Pages
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Manufacturer  IMP [IMP, Inc]
Direct Link  http://www.ds-imp.com.cn/index.asp
Logo IMP - IMP, Inc

C1227 Datasheet(HTML) 2 Page - IMP, Inc

  C1227 Datasheet HTML 1Page - IMP, Inc C1227 Datasheet HTML 2Page - IMP, Inc  
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72
C1227-4-98
Diffusion & Thin Films
Symbol
Minimum
Typical
Maximum
Unit
Comments
Starting Material p<100>
Well(field)Sheet Resistance
ρ
N-well(f)
1.5
2.1
2.7
K
Ω/
n-well
N+ Sheet Resistance
ρ
N+
20.0
35.0
50.0
Ω/
N+ Junction Depth
xjN+
0.4
µm
P+ Sheet Resistance
ρ
P+
50.0
75.0
100.0
Ω/
P+ Junction Depth
xjP+
0.4
µm
Base Resistance
RSHB_RB
1.33
1.66
2.00
K
Ω/sq
High-Voltage Gate Oxide
HTGOX
22
nm
Gate Oxide Thickness
TGOX
22
nm
Interpoly Oxide Thickness
IPOX
33.6
42
50.4
nm
Gate Poly Sheet Resistance
ρ
POLY1
15.0
22.0
30.0
Ω/
Poly2 Resistivity
RSH_PL P
1.5
2
2.5
k
Ω/
Metal-1 Sheet Resistance
ρ
M1
35.0
45.0
65.0
m
Ω/
Metal-2 Sheet Resistance
ρ
M2
19.0
25.0
35.0
m
Ω/
Passivation Thickness
TPASS
200+900
nm
oxide+nitride
Min Channel Width
4.0
µm
Diffusion Overlap of Contact
1.0
µm
Min Spacing, Active Region, 5V
2.0
µm
Poly Overlap of Contact
1.0
µm
Poly1 Width/Space
1.4/2.0
µm
Metal-1 Overlap of Contact
1.5
µm
Poly2 Width/Space
3.0/2.0
µm
Contact to Poly Space
1.5
µm
Contact Width/Space
1.4x1.4
µm
Minimum Pad Opening
65x65
µm
Via Width/Space
1.4/1.6
µm
Metal-1 Overlap of Via
1.0
µm
Metal-1 Width/Space
2.6/1.6
µm
Metal-2 Overlap of Via
1.0
µm
Metal-2 Width/Space
2.6/1.6
µm
Minimum Pad Opening
65x65
µm
Gate Poly Width/Space
1.5/2.0
µm
Minimum Pad to Pad Spacing
5.0
µm
N+/P+ Width/Space
2.5/2.0
µm
Minimum Pad Pitch
80
µm
Layout Rules
Physical Characteristics
Process C1227



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