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C1227 Datasheet(PDF) 1 Page - IMP, Inc |
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C1227 Datasheet(HTML) 1 Page - IMP, Inc |
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1 / 2 page  71 © IMP, Inc. Process C1227 HV BiCMOS 1.2 µm 30V Double Metal - Double Poly Electrical Characteristics T=25oC Unless otherwise noted ISO 9001 Registered ® Symbol Minimum Typical Maximum Unit Comments N-Channel High Voltage Transistor Threshold Voltage HVTN 0.7 0.9 1.1 V Punch Through Voltage HVBVDSSP 36 V ON Resistance HVPR0N 1.4 m Ω-@VGS = 5V cm2 VDS = 0.1V Operating Voltage VGS = 5V V VDS = 30V N-Channel Low Voltage Transistor Threshold Voltage VTN 0.4 0.6 0.8 V 100x1.4 µm Body Factor γN 0.50 0.65 0.80 V1/2 100x1.4 µm Conduction Factor βN 64.0 75.0 86.0 µA/V2 100x100 µm Effective Channel Length LeffN 1.20 1.35 1.50 µm 100x1.4 µm Width Encroachment ∆WN 0.45 µm Per side Punch Through Voltage BVDSSN 8V Poly Field Threshold Voltage VTFPN 10 18 V Vertical NPN Transistor Symbol Minimum Typical Maximum Unit Comments Beta hFE 50 140 240 4.5x4.5 µm Early Voltage VA 34 V Cut-Off Frequency fτ 1.89 GHz Capacitance Symbol Minimum Typical Maximum Unit Comments Gate Oxide COX 1.338 1.439 1.569 fF/ µm2 Metal-1 to Poly1 CM1P 0.040 0.046 0.052 fF/ µm2 Metal-2 to Metal-1 CMM 0.043 0.050 0.057 fF/ µm2 Symbol Minimum Typical Maximum Unit Comments P-Channel High Voltage Transistor Threshold Voltage HVTP – 0.7 – 0.9 –1.1 V Punch Through Voltage HVBVDSSP –36 V ON Resistance HVPR0N 11.0 m Ω-@VGS = –5V cm2 @VDS = –0.1V P-Channel Low Voltage Transistor Threshold Voltage VTP – 0.8 – 0.6 – 0.4 V 100x1.4 µm Body Factor γ P 0.35 0.50 0.65 V1/2 100x1.4 µm Conduction Factor β P 20.0 25.0 30.0 µA/V2 100x100µm Effective Channel Length LeffP 1.35 1.50 1.65 µm 100x1.4 µm Width Encroachment ∆WP 0.40 µm Per side Punch Through Voltage BVDSSP –8 V Poly Field Threshold Voltage VTFP(P) –10 –18 V |
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