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HCPS2907 Datasheet(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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HCPS2907 Datasheet(HTML) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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1 / 4 page  ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 1 / 4 HCPS2907(PNP) REPLACEMENT TYPE : MPS2907 FEATURES Complementary NPN Type Available (HCPS2222) MAXIMUM RATINGS (TA=25°C unless otherwise noted) ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Parameter Symbol Test conditions Min Typ Max Unit Collector-Base Breakdown Voltage VCBO IC=-10μA , IE=0 -60 V Collector-Emitter Breakdown Voltage VCEO IC=-10mA , IB=0 -40 V Emitter-Base Breakdown Voltage VEBO IE=-10μA , IC=0 -5 V Collector Cut-off Current ICBO VCB=-50V , IE=0 -10 nA Collector Cut-off Current ICBX VCE=-30V,VEB(off)=-0.5V -50 nA Emitter Cut-off Current IEBO VEB=-3V , IC=0 -10 nA DC Current Gain hFE(1) VCE=-10V , IC=-0.1mA 52 hFE(2) VCE=-10V , IC=-150mA 100 300 hFE(3) VCE=-10V , IC=-500mA 32 Collector-Emitter Saturation Voltage VCE(sat) IC=-150mA , IB=-15mA -0.4 V VCE(sat) IC=-500mA , IB=-50mA -0.67 V Base-Emitter Saturation Voltage VBE(sat) IC=-150mA , IB=-15mA -1 V VBE(sat) IC=-500mA , IB=-50mA -1.2 V Transition Frequency fT VCE=-20V,IC=-50mA,f=100MHz 200 MHz Delay Time tD VCC=-30V,Ic=-150mA IB1=-15mA 10 nS Rise Time tR 25 nS Storage Time tS VCC=-6V,Ic=-150mA IB1=IB2=-15mA 225 nS Fall Time tF 60 nS CLASSIFICATION OF hFE Rank L H Range 100-200 200-300 Parameter Symbol Value Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current-Continuous IC -0.6 A Collector Power Dissipation PC 0.625 W Junction Temperature TJ 150 °C Storage Temperature Tstg -55-150 °C TO-92 1:EMITTER 2:BASE 3:COLLECTOR SWITCHING TRANSISTOR |
Similar Part No. - HCPS2907 |
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Similar Description - HCPS2907 |
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