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NT5DS64M4AT Datasheet(PDF) 22 Page - List of Unclassifed Manufacturers

Part # NT5DS64M4AT
Description  256Mb DDR333/300 SDRAM
PDF  27 Pages
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Manufacturer  ETC [List of Unclassifed Manufacturers]
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NT5DS64M4AT Datasheet(HTML) 22 Page - List of Unclassifed Manufacturers

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NT5DS64M4AT NT5DS64M4AW
NT5DS32M8AT NT5DS32M8AW
256Mb DDR333/300 SDRAM
Preliminary
10/01
22
© NANYA TECHNOLOGY CORP. All rights reserved.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Electrical Characteristics & AC Timing - Absolute Specifications
(0
°C ≤ T
A ≤ 70 °C; VDDQ = 2.5V ± 0.2V; VDD = 2.5V ± 0.2V, See AC Characteristics) (Part 1 of 2)
Symbol
Parameter
DDR333
(-6)
DDR300
(-66)
Unit
Notes
Min
Max
Min
Max
tAC
DQ output access time from CK/CK
− 0.7
+ 0.7
− 0.75
+ 0.75
ns
1-4
tDQSCK
DQS output access time from CK/CK
− 0.7
+ 0.7
− 0.75
+ 0.75
ns
1-4
tCH
CK high-level width
0.45
0.55
0.45
0.55
tCK
1-4
tCL
CK low-level width
0.45
0.55
0.45
0.55
tCK
1-4
tCK
Clock cycle time
CL = 2.5
6
12
6.6
12
ns
1-4
CL = 2.0
7.5
12
7.5
12
tDH
DQ and DM input hold time
0.45
0.5
ns
1-4,
15,16
tDS
DQ and DM input setup time
0.45
0.5
ns
1-4,
15,16
tDIPW
DQ and DM input pulse width (each input)
1.75
1.75
ns
1-4
tHZ
Data-out high-impedance time from CK/CK
− 0.7
+ 0.7
− 0.75
+ 0.57
ns
1-4, 5
tLZ
Data-out low-impedance time from CK/CK
− 0.7
+ 0.7
− 0.75
+ 0.75
ns
1-4, 5
tDQSQ
DQS-DQ skew (DQS & associated DQ signals)
+ 0.4
+ 0.5
ns
1-4
tHP
minimum half clk period for any given cycle;
defined by clk high (tCH) or clk low (tCL) time
min
(tCH,tCL)
min
(tCH,tCL)
tCK
1-4
tQH
Data output hold time from DQS
tHP - tQHS
tHP - tQHS
tCK
1-4
tDQSS
Write command to 1st DQS latching
transition
0.75
1.25
0.75
1.25
tCK
1-4
tDQSL,H
DQS input low (high) pulse width (write cycle)
0.35
0.35
tCK
1-4
tDSS
DQS falling edge to CK setup time (write cycle)
0.2
0.2
tCK
1-4
tDSH
DQS falling edge hold time from CK (write cycle)
0.2
0.2
tCK
1-4
tMRD
Mode register set command cycle time
2 x tCK
2 x tCK
ns
1-4
tWPRES
Write preamble setup time
0
0
ns
1-4, 7
tWPST
Write postamble
0.40
0.60
0.40
0.60
tCK
1-4, 6
tWPRE
Write preamble
0.25
0.25
tCK
1-4
tIH
Address and control input hold time
(fast slew rate)
0.75
0.9
ns
2-4,
9,11,12
tIS
Address and control input setup time
(fast slew rate)
0.75
0.9
ns
2-4,
9,11,12
tIH
Address and control input hold time
(slow slew rate)
0.8
1.0
ns
2-4, 10,
11,12,14
tIS
Address and control input setup time
(slow slew rate)
0.8
1.0
ns
2-4, 10,
11,12,14
tIPW
Input pulse width
2.2
2.2
ns
2-4, 12
tRPRE
Read preamble
0.9
1.1
0.9
1.1
tCK
1-4
tRPST
Read postamble
0.40
0.60
0.40
0.60
tCK
1-4
tRAS
Active to Precharge command
42
120,000
45
120,000
ns
1-4



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