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NT5DS64M4AT Datasheet(PDF) 22 Page - List of Unclassifed Manufacturers |
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NT5DS64M4AT Datasheet(HTML) 22 Page - List of Unclassifed Manufacturers |
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22 / 27 page ![]() NT5DS64M4AT NT5DS64M4AW NT5DS32M8AT NT5DS32M8AW 256Mb DDR333/300 SDRAM Preliminary 10/01 22 © NANYA TECHNOLOGY CORP. All rights reserved. NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice. Electrical Characteristics & AC Timing - Absolute Specifications (0 °C ≤ T A ≤ 70 °C; VDDQ = 2.5V ± 0.2V; VDD = 2.5V ± 0.2V, See AC Characteristics) (Part 1 of 2) Symbol Parameter DDR333 (-6) DDR300 (-66) Unit Notes Min Max Min Max tAC DQ output access time from CK/CK − 0.7 + 0.7 − 0.75 + 0.75 ns 1-4 tDQSCK DQS output access time from CK/CK − 0.7 + 0.7 − 0.75 + 0.75 ns 1-4 tCH CK high-level width 0.45 0.55 0.45 0.55 tCK 1-4 tCL CK low-level width 0.45 0.55 0.45 0.55 tCK 1-4 tCK Clock cycle time CL = 2.5 6 12 6.6 12 ns 1-4 CL = 2.0 7.5 12 7.5 12 tDH DQ and DM input hold time 0.45 0.5 ns 1-4, 15,16 tDS DQ and DM input setup time 0.45 0.5 ns 1-4, 15,16 tDIPW DQ and DM input pulse width (each input) 1.75 1.75 ns 1-4 tHZ Data-out high-impedance time from CK/CK − 0.7 + 0.7 − 0.75 + 0.57 ns 1-4, 5 tLZ Data-out low-impedance time from CK/CK − 0.7 + 0.7 − 0.75 + 0.75 ns 1-4, 5 tDQSQ DQS-DQ skew (DQS & associated DQ signals) + 0.4 + 0.5 ns 1-4 tHP minimum half clk period for any given cycle; defined by clk high (tCH) or clk low (tCL) time min (tCH,tCL) min (tCH,tCL) tCK 1-4 tQH Data output hold time from DQS tHP - tQHS tHP - tQHS tCK 1-4 tDQSS Write command to 1st DQS latching transition 0.75 1.25 0.75 1.25 tCK 1-4 tDQSL,H DQS input low (high) pulse width (write cycle) 0.35 0.35 tCK 1-4 tDSS DQS falling edge to CK setup time (write cycle) 0.2 0.2 tCK 1-4 tDSH DQS falling edge hold time from CK (write cycle) 0.2 0.2 tCK 1-4 tMRD Mode register set command cycle time 2 x tCK 2 x tCK ns 1-4 tWPRES Write preamble setup time 0 0 ns 1-4, 7 tWPST Write postamble 0.40 0.60 0.40 0.60 tCK 1-4, 6 tWPRE Write preamble 0.25 0.25 tCK 1-4 tIH Address and control input hold time (fast slew rate) 0.75 0.9 ns 2-4, 9,11,12 tIS Address and control input setup time (fast slew rate) 0.75 0.9 ns 2-4, 9,11,12 tIH Address and control input hold time (slow slew rate) 0.8 1.0 ns 2-4, 10, 11,12,14 tIS Address and control input setup time (slow slew rate) 0.8 1.0 ns 2-4, 10, 11,12,14 tIPW Input pulse width 2.2 2.2 ns 2-4, 12 tRPRE Read preamble 0.9 1.1 0.9 1.1 tCK 1-4 tRPST Read postamble 0.40 0.60 0.40 0.60 tCK 1-4 tRAS Active to Precharge command 42 120,000 45 120,000 ns 1-4 |
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