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ON2152 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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ON2152 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
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1 / 3 page ![]() Reflective Photosensors (Photo Reflectors) 1 Publication date: April 2004 SHG00052BED CNZ2152 (ON2152) Reflective photosensor Non-contact point SW, object sensing ■ Overview CNZ2152 is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity Si phototransistor is used as the light detecting element. The two elements are located parallel in the same direction and objects are detected when passing in front of the device. ■ Features • Fast response • High sensitivity • High SN ratio ■ Applications • Detection of paper, film and cloth • Optical mark reading • Detection of coin and bill • Detection of position and edge • Start, end mark detection of magnetic tape ■ Absolute Maximum Ratings T a = 25°C Unit: mm Parameter Symbol Rating Unit Input (Light Reverse voltage VR 3V emitting diode) Forward current IF 100 mA Power dissipation * 1 PD 150 mW Output (Photo Collector-emitter voltage VCEO 20 V transistor) (Base open) Emitter-collector voltage VECO 3V (Base open) Collector current IC 30 mA Collector power dissipation * 2 PC 150 mW Temperature Operating ambient temperature Topr −25 to +85 °C Storage temperature Tstg −30 to +100 °C Parameter Symbol Conditions Min Typ Max Unit Input Forward voltage VF IF = 100 mA 1.25 1.50 V characteristics Reverse current IR VR = 5 V 10 µA Output Collector-emitter cutoff current ICEO VCE = 10 V 0.05 2.00 µA characteristics (Base open) Transfer Collector current * 1 IC * 2 VCC = 5 V, IF = 20 mA, RL = 100 Ω 0.8 3.0 mA characteristics IC * 3 500 µA Collector-emitter saturation voltage VCE(sat) IF = 100 mA, IC = 1 mA 0.6 V Rise time tr VCC = 10 V, IC = 1 mA, RL = 100 Ω 8 µs Fall time tf 8 µs *2: White paper (reflective ratio 90%) *3: Tracing paper (paper SM-1 for 2nd original paper) R L I F I C V CC d = 5 mm Test Paper (Note) ( ) Dimension is reference (10.0) (2.54) 4- φ0.45 φ0.9 +0.1 -0.2 +0.1 -0.2 14.0 16.0±0.3 φ2.2±0.2 Mark for indicating LED side φ1.5 2 3 1 4 1: Cathode 2: Anode 3: Emitter 4: Collector PRSTR104-001 Package ■ Electrical-Optical Characteristics T a = 25°C ± 3°C Note) 1. Input and output are handled electrically. 2. This product is not designed to withstand radiation 3. *1: Output current measurement circuit (Ambient light is shut off completely) Note) The part number in the parenthesis shows conventional part number. Note) *1: Input power derating ratio is 2.0 mW/ °C at T a ≥ 25°C. *2: Output power derating ratio is 2.0 mW/ °C at T a ≥ 25°C. |
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