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ON2152 Datasheet(PDF) 1 Page - Panasonic Semiconductor

Part # ON2152
Description  Reflective photosensor
PDF  3 Pages
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Manufacturer  PANASONIC [Panasonic Semiconductor]
Direct Link  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

ON2152 Datasheet(HTML) 1 Page - Panasonic Semiconductor

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Reflective Photosensors (Photo Reflectors)
1
Publication date: April 2004
SHG00052BED
CNZ2152 (ON2152)
Reflective photosensor
Non-contact point SW, object sensing
■ Overview
CNZ2152 is a photosensor detecting the change of reflective light
in which a high efficiency GaAs infrared light emitting diode is used
as the light emitting element, and a high sensitivity Si phototransistor
is used as the light detecting element. The two elements are located
parallel in the same direction and objects are detected when passing
in front of the device.
■ Features
• Fast response
• High sensitivity
• High SN ratio
■ Applications
• Detection of paper, film and cloth • Optical mark reading
• Detection of coin and bill
• Detection of position and edge
• Start, end mark detection of magnetic tape
■ Absolute Maximum Ratings T
a = 25°C
Unit: mm
Parameter
Symbol
Rating
Unit
Input (Light
Reverse voltage
VR
3V
emitting diode) Forward current
IF
100
mA
Power dissipation *
1
PD
150
mW
Output (Photo Collector-emitter voltage
VCEO
20
V
transistor)
(Base open)
Emitter-collector voltage
VECO
3V
(Base open)
Collector current
IC
30
mA
Collector power dissipation *
2
PC
150
mW
Temperature
Operating ambient temperature
Topr
−25 to +85
°C
Storage temperature
Tstg
−30 to +100
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Input
Forward voltage
VF
IF = 100 mA
1.25
1.50
V
characteristics Reverse current
IR
VR = 5 V
10
µA
Output
Collector-emitter cutoff current
ICEO
VCE
= 10 V
0.05
2.00
µA
characteristics (Base open)
Transfer
Collector current *
1
IC *
2
VCC = 5 V, IF = 20 mA, RL = 100 Ω
0.8
3.0
mA
characteristics
IC *
3
500
µA
Collector-emitter saturation voltage VCE(sat) IF = 100 mA, IC = 1 mA
0.6
V
Rise time
tr
VCC = 10 V, IC = 1 mA, RL = 100 Ω
8
µs
Fall time
tf
8
µs
*2: White paper (reflective ratio 90%)
*3: Tracing paper (paper SM-1 for 2nd original paper)
R
L
I
F
I
C
V
CC
d
= 5 mm
Test Paper
(Note) ( ) Dimension is reference
(10.0)
(2.54)
4-
φ0.45
φ0.9
+0.1
-0.2
+0.1
-0.2
14.0
16.0±0.3
φ2.2±0.2
Mark for
indicating
LED side
φ1.5
2
3
1
4
1: Cathode
2: Anode
3: Emitter
4: Collector
PRSTR104-001 Package
■ Electrical-Optical Characteristics T
a = 25°C ± 3°C
Note) 1. Input and output are handled electrically.
2. This product is not designed to withstand radiation
3. *1: Output current measurement circuit (Ambient light is shut off completely)
Note) The part number in the parenthesis shows conventional part number.
Note) *1: Input power derating ratio is
2.0 mW/
°C at T
a
≥ 25°C.
*2: Output power derating ratio is
2.0 mW/
°C at T
a
≥ 25°C.


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