TMS44409, TMS44409P

1048576-WORD BY 4-BIT

DYNAMIC RANDOM-ACCESS MEMORY

SMHS563 – JULY1995

7

POST OFFICE BOX 1443

switching characteristics over recommended ranges of supply voltage and operating free-air

temperature (see Figure 1)

PARAMETER

’44409-60

’44409P-60

’44409-70

’44409P-70

’44409-80

’44409P-80

UNIT

MIN

MAX

MIN

MAX

MIN

MAX

tAA

Access time from column address

30

35

40

ns

tCAC

Access time from CAS low

15

18

20

ns

tCPA

Access time from column precharge

35

40

45

ns

tRAC

Access time from RAS low

60

70

80

ns

tOEA

Access time from OE low

15

18

20

ns

tCLZ

CAS to output in low-impedance state

0

0

0

ns

tREZ

Output disable time, start of RAS high (see Note 6)

3

15

3

18

3

20

ns

tCEZ

Output disable time, start of CAS high (see Note 6)

3

15

3

18

3

20

ns

tOEZ

Output disable time after OE high (see Note 6)

3

15

3

18

3

20

ns

tWEZ

Output disable time after W high (see Note 6)

3

15

3

18

3

20

ns

NOTE 6: Maximum tREZ, tCEZ, tWEZ and tOEZ are specified when the output is no longer driven.

EDO timing requirements over recommended ranges of supply voltage and operating free-air

temperature

’44409-60

’44409P-60

’44409-70

’44409P-70

’44409-80

’44409P-80

UNIT

MIN

MAX

MIN

MAX

MIN

MAX

tHPC

Cycle time, EDO page-mode read or write

25

30

35

ns

tCSH

Hold time, CAS from RAS

50

55

60

ns

tCHO

Hold time, OE from CAS

10

10

10

ns

tDOH

Hold time, output from CAS

3

3

3

ns

tCAS

Pulse duration, CAS

10

10 000

12

10 000

15

10 000

ns

tWPE

Pulse duration, W (output disable only)

5

5

5

ns

tOCH

Setup time, OE before CAS

10

10

10

ns

tCP

Precharge time, CAS

5

5

5

ns

tOEP

Precharge time, OE

5

5

5

ns