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MP6528 Datasheet(PDF) 14 Page - Monolithic Power Systems

Part # MP6528
Description  5V to 60V, H-Bridge Gate Driver
PDF  17 Pages
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Manufacturer  MPS [Monolithic Power Systems]
Direct Link  http://www.monolithicpower.com
Logo MPS - Monolithic Power Systems

MP6528 Datasheet(HTML) 14 Page - Monolithic Power Systems

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MP6528 – 5V TO 60V, H-BRIDGE GATE DRIVER
MP6528 Rev. 1.03
www.MonolithicPower.com
14
6/20/2017
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2017 MPS. All Rights Reserved.
the minimum bootstrap capacitance can be
estimated as CBOOT > 8*QG, where QG is the total
gate charge of the MOSFET in nC, and CBOOT is
in nF.
The bootstrap capacitors should not
exceed 1µF, or they may cause improper
operation at start-up.
For
most
applications,
bootstrap
capacitors
between 0.1µF and 1µF, X5R or X7R ceramic,
rated for 25V minimum, are recommended.
The VREG pin requires a bypass capacitor to
ground of 10µF. This should be an X7R or X5R
ceramic capacitor rated for 16V minimum.
VIN requires a bypass capacitor to ground,
placed as close as possible to the device. At a
minimum, a 0.1µF X5R or X7R ceramic capacitor,
rated for the VIN voltage, is recommended.
Depending on the power supply impedance and
the distance between the MOSFETs and the
power supply, additional bulk capacitance is
usually needed.
Between 47µF and 470µF of
low ESR electrolytic capacitors are typically used.
Dead Time Resistor Selection
During the transition between driving an output
low and high, there is a short period when neither
the HS nor LS MOSFET is turned on.
This
period, called “dead time”, is needed to prevent
any overlap in conduction between HS and LS
MOSFETs, which would effectively provide a
short-circuit directly between the power supply
and ground.
This condition, referred to as
“shoot-through”, causes large transient currents,
and can destroy the MOSFETs.
Since motors are inductive by nature, once
current is flowing in the motor, it cannot stop
immediately, even if the MOSFETs are turned off.
This “recirculation current” continues to flow in
the original direction until the magnetic field has
decayed.
When the MOSFETs are turned off, this current
will flow through the “body diode” which is
inherent in the MOSFET device.
MOSFET body diodes have a much higher
voltage drop than the MOSFET has during
conduction, so there more power dissipated in
body diode conduction than during the on time.
Because of this, it is desirable to minimize the
dead time.
However, the dead time must be
made large enough to guarantee under all
conditions that the HS and LS MOSFETs are
never turned on at the same time.
Dead time can be set over a large range, by
selecting the value of the external resistor that is
connected to the DT pin. Usually, a good starting
point is a dead time of about 1µS, which requires
a 200k resistor on the DT pin. If faster switching
and/or a high PWM frequency (over ~30kHz) is
used, shorter dead time may be desirable; if
switching is slowed using external gate resistors,
longer dead time may be needed.
The waveform below shows about a 300nS dead
time between the LS gate turn-off and the HS
gate turn-on.
LSS Resistor Selection
If the voltage applied to the LSS pin ever
exceeds 500mV, an overcurrent event will be
recognized. The external sense resistor is sized
to provide less than 500mV drop at the maximum
expected motor current. For example, if a 50 mΩ
resistor is used, a current of 10 amps would
cause
a
500mV
drop,
and
activate
the
overcurrent protection.
If this function is not needed, connect LSS
directly to ground.
OCREF Voltage Selection
An internal comparator compares the voltage
drop across each MOSFET with a voltage that is
externally provided on the OCREF input pin.
This voltage is normally provided by an external
resistor divider from a convenient power supply.
If the drop across any MOSFET ever exceeds
the voltage on the OCREF pin, a short-circuit
event is recognized.
If this function is not needed, connect OCREF to
VREG through a 100k resistor.



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