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MP6528 Datasheet(PDF) 14 Page - Monolithic Power Systems |
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MP6528 Datasheet(HTML) 14 Page - Monolithic Power Systems |
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14 / 17 page ![]() MP6528 – 5V TO 60V, H-BRIDGE GATE DRIVER MP6528 Rev. 1.03 www.MonolithicPower.com 14 6/20/2017 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2017 MPS. All Rights Reserved. the minimum bootstrap capacitance can be estimated as CBOOT > 8*QG, where QG is the total gate charge of the MOSFET in nC, and CBOOT is in nF. The bootstrap capacitors should not exceed 1µF, or they may cause improper operation at start-up. For most applications, bootstrap capacitors between 0.1µF and 1µF, X5R or X7R ceramic, rated for 25V minimum, are recommended. The VREG pin requires a bypass capacitor to ground of 10µF. This should be an X7R or X5R ceramic capacitor rated for 16V minimum. VIN requires a bypass capacitor to ground, placed as close as possible to the device. At a minimum, a 0.1µF X5R or X7R ceramic capacitor, rated for the VIN voltage, is recommended. Depending on the power supply impedance and the distance between the MOSFETs and the power supply, additional bulk capacitance is usually needed. Between 47µF and 470µF of low ESR electrolytic capacitors are typically used. Dead Time Resistor Selection During the transition between driving an output low and high, there is a short period when neither the HS nor LS MOSFET is turned on. This period, called “dead time”, is needed to prevent any overlap in conduction between HS and LS MOSFETs, which would effectively provide a short-circuit directly between the power supply and ground. This condition, referred to as “shoot-through”, causes large transient currents, and can destroy the MOSFETs. Since motors are inductive by nature, once current is flowing in the motor, it cannot stop immediately, even if the MOSFETs are turned off. This “recirculation current” continues to flow in the original direction until the magnetic field has decayed. When the MOSFETs are turned off, this current will flow through the “body diode” which is inherent in the MOSFET device. MOSFET body diodes have a much higher voltage drop than the MOSFET has during conduction, so there more power dissipated in body diode conduction than during the on time. Because of this, it is desirable to minimize the dead time. However, the dead time must be made large enough to guarantee under all conditions that the HS and LS MOSFETs are never turned on at the same time. Dead time can be set over a large range, by selecting the value of the external resistor that is connected to the DT pin. Usually, a good starting point is a dead time of about 1µS, which requires a 200k resistor on the DT pin. If faster switching and/or a high PWM frequency (over ~30kHz) is used, shorter dead time may be desirable; if switching is slowed using external gate resistors, longer dead time may be needed. The waveform below shows about a 300nS dead time between the LS gate turn-off and the HS gate turn-on. LSS Resistor Selection If the voltage applied to the LSS pin ever exceeds 500mV, an overcurrent event will be recognized. The external sense resistor is sized to provide less than 500mV drop at the maximum expected motor current. For example, if a 50 mΩ resistor is used, a current of 10 amps would cause a 500mV drop, and activate the overcurrent protection. If this function is not needed, connect LSS directly to ground. OCREF Voltage Selection An internal comparator compares the voltage drop across each MOSFET with a voltage that is externally provided on the OCREF input pin. This voltage is normally provided by an external resistor divider from a convenient power supply. If the drop across any MOSFET ever exceeds the voltage on the OCREF pin, a short-circuit event is recognized. If this function is not needed, connect OCREF to VREG through a 100k resistor. |
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