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2N6232 Datasheet(PDF) 1 Page - Microsemi Corporation

Part # 2N6232
Description  SILICON NPN TRANSISTOR
PDF  2 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

2N6232 Datasheet(HTML) 1 Page - Microsemi Corporation

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TECHNICAL DATA
SILICON NPN TRANSISTOR
Devices
2N6232
10 AMP
100 V
•
FAST SWITCHING
•
LOW SATURATION VOLTAGE
MAXIMUM RATINGS
Ratings
Symbol
Value
Units
Collector-Emitter Voltage
VCEO
100
Vdc
Collector-Base Voltage
VCBO
140
Vdc
Emitter-Base Voltage
VEBO
7.0
Vdc
Collector Current – Peak (1)
IC
10
Adc
Base Current – Continuous
IB
Adc
Total Power Dissipation @ TC = 25
0C
PD
1.25
W
W/0C
Operating & Storage Junction Temperature Range
TJ, Tstg
-65 to +200
0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
RθJC
6.67
0C/W
(1) Pulse Test: Pulse Width = Duty Cycle < %
TO-5
ELECTRICAL CHARACTERISTICS (TC = 25
0C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (2)
IC = 100 mAdc, IB = 0
VCEO(sus)
100
Vdc
Collector-Emitter Cutoff Current
VCE = 140 Vdc, Rbe = 0
ICES
0.2
uAdc
Collector Cutoff Current
VCE = 100 Vdc, RBE = 0 Ω, TC = 150
0C
ICES
0.1
mAdc
Emitter-Base Cutoff Current
VEB = 7.0 Vdc, IC = 0
IEBO
10
uAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
10604
Page 1 of 2


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