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EL5174 Datasheet(PDF) 11 Page - Renesas Technology Corp |
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EL5174 Datasheet(HTML) 11 Page - Renesas Technology Corp |
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11 / 15 page ![]() EL5174, EL5374 FN7313 Rev 9.00 Page 11 of 15 August 12, 2015 FIGURE 26. Choice of Feedback Resistor and Gain Bandwidth Product For applications that require a gain of +1, no feedback resistor is required. Just short the OUT+ pin to FBP pin and OUT- pin to FBN pin. For gains greater than +1, the feedback resistor forms a pole with the parasitic capacitance at the inverting input. As this pole becomes smaller, the amplifier's phase margin is reduced. This causes ringing in the time domain and peaking in the frequency domain. Therefore, RF has some maximum value that should not be exceeded for optimum performance. If a large value of RF must be used, a small capacitor in the few Pico farad range in parallel with RF can help to reduce the ringing and peaking at the expense of reducing the bandwidth. The bandwidth of the EL5174 and EL5374 depends on the load and the feedback network. RF and RG appear in parallel with the load for gains other than +1. As this combination gets smaller, the bandwidth falls off. Consequently, RF also has a minimum value that should not be exceeded for optimum bandwidth performance. For gain of +1, RF = 0 is optimum. For the gains other than +1, optimum response is obtained with RF between 500 to 1k. The EL5174 and EL5374 have a gain bandwidth product of 200MHz for RLD = 1k. For gains 5, its bandwidth can be predicted by Equation 3: Driving Capacitive Loads and Cables The EL5174 and EL5374 can drive a 23pF differential capacitor in parallel with 1k differential load with less than 5dB of peaking at gain of +1. If less peaking is desired in applications, a small series resistor (usually between 5 to 50 ) can be placed in series with each output to eliminate most peaking. However, this will reduce the gain slightly. If the gain setting is greater than 1, the gain resistor RG can then be chosen to make up for any gain loss, which may be created by the additional series resistor at the output. When used as a cable driver, double termination is always recommended for reflection-free performance. For those applications, a back-termination series resistor at the amplifier's output will isolate the amplifier from the cable and allow extensive capacitive drive. However, other applications may have high capacitive loads without a back-termination resistor. Again, a small series resistor at the output can help to reduce peaking. Disable/Power-Down (for EL5374 only) The EL5374 can be disabled and its outputs placed in a high impedance state. The turn-off time is about 1.2µs and the turn-on time is about 130ns. When disabled, the amplifier's supply current is reduced to 1.7µA for IS+ and 120µA for IS- typically, thereby effectively eliminating the power consumption. The amplifier's power-down can be controlled by standard CMOS signal levels at the EN pin. The applied logic signal is relative to the VS+ pin. Letting the EN pin float or applying a signal that is less than 1.5V below VS+ will enable the amplifier. The amplifier will be disabled when the signal at the EN pin is above VS+ - 0.5V. Output Drive Capability The EL5174 and EL5374 have internal short circuit protection. Its typical short circuit current is ±60mA. If the output is shorted indefinitely, the power dissipation could easily increase such that the part will be destroyed. Maximum reliability is maintained if the output current never exceeds ±60mA. This limit is set by the design of the internal metal interconnections. Power Dissipation With the high output drive capability of the EL5174 and EL5374, it is possible to exceed the +135°C absolute maximum junction temperature under certain load current conditions. Therefore, it is important to calculate the maximum junction temperature for the application to determine if the load conditions or package types need to be modified for the amplifier to remain in the safe operating area. The maximum power dissipation allowed in a package is determined according to Equation 4: Where: TJMAX = Maximum junction temperature TAMAX = Maximum ambient temperature JA = Thermal resistance of the package The maximum power dissipation actually produced by an IC is the total quiescent supply current times the total power supply voltage, plus the power in the IC due to the load, or as expressed in Equation 5: Where: VSTOT = Total supply voltage = VS+ - VS- ISMAX = Maximum quiescent supply current per channel VO = Maximum differential output voltage of the application RLD = Differential load resistance VO+ FBP RG RF2 IN+ IN- REF FBN VIN+ VIN- VREF RF1 VO- Gain BW 200MHz = (EQ. 3) PDMAX TJMAX TAMAX – JA --------------------------------------------- = (EQ. 4) (EQ. 5) PD i VSTOT ISMAX V STOT V O – V O RLD ------------ + = |
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