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EFD25 Datasheet(PDF) 2 Page - NXP Semiconductors |
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EFD25 Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 6 page ![]() 1997 Nov 21 2 Philips Components Product specification EFD cores and accessories EFD25 CORES Effective core parameters SYMBOL PARAMETER VALUE UNIT Σ(I/A) core factor (C1) 1.00 mm−1 Ve effective volume 3300 mm3 Ie effective length 57.0 mm Ae effective area 58.0 mm2 Amin minimum area 55 mm2 m mass of core half ≈8g Fig.1 EFD25 core half. Dimensions in mm. handbook, halfpage MGC342 11.4 0.2 18.7 0.6 25 0.65 9.3 0.25 12.5 0.15 5.2 0.15 0.6 9.1 0.2 Core halves Gapped cores are available on request. Clamping force 40 ±20 N. Properties of core sets under power conditions GRADE AL (nH) µ e AIR GAP ( µm) TYPE NUMBER 3C30 1800 ±25% ≈1450 ≈0 EFD25-3C30 3C85 2200 ±25% ≈1780 ≈0 EFD25-3C85 3C90 2200 ±25% ≈1780 ≈0 EFD25-3C90 3F3 2000 ±25% ≈1600 ≈0 EFD25-3F3 3F4 1000 ±25% ≈800 ≈0 EFD25-3F4 GRADE B (mT) at CORE LOSS (W) at H = 250 A/m; f = 25 kHz; T = 100 °C f=25kHz; = 200 mT; T = 100 °C f = 100 kHz; = 100 mT; T = 100 °C f = 400 kHz; =50mT; T = 100 °C f = 1 MHz; =30mT; T = 100 °C f = 3 MHz; =10mT; T = 100 °C 3C30 ≥360 ≤0.35 ≤0.38 −− − 3C85 ≥320 ≤0.50 ≤0.60 −− − 3C90 ≥330 ≤0.35 ≤0.38 −− − 3F3 ≥315 −≤0.38 ≤0.66 −− 3F4 ≥300 −− − ≤0.70 ≤1.10 B ˆ B ˆ B ˆ B ˆ B ˆ |
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