PIC1F628 datasheet(132/170 Pages) MICROCHIP

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PIC16F62X

DS40300C-page 130

Preliminary

 2003 Microchip Technology Inc.

17.1

DC Characteristics: PIC16F62X-04 (Commercial, Industrial, Extended)

PIC16F62X-20 (Commercial, Industrial, Extended)

PIC16LF62X-04 (Commercial, Industrial)

PIC16LF62X-04

(Commercial, Industrial)

Standard Operating Conditions (unless otherwise stated)

Operating temperature

-40

°C ≤ Ta ≤ +85°C for industrial and

°C ≤ Ta ≤ +70°C for commercial

PIC16F62X-04

PIC16F62X-20

(Commercial, Industrial, Extended)

Standard Operating Conditions (unless otherwise stated)

Operating temperature

-40

°C ≤ Ta ≤ +85°C for industrial and

°C ≤ Ta ≤ +70°C for commercial and

-40

°C ≤ Ta ≤ +125°C for extended

Param

No.

Sym

Characteristic/Device

Min

Typ†

Max

Units

Conditions

Supply Voltage

D001

PIC16LF62X

2.0

—

5.5

D001

PIC16F62X

3.0

—

5.5

D002

RAM Data Retention

Voltage(1)

—

1.5

—

Device in SLEEP mode*

D003

POR

DD Start Voltage

to ensure Power-on Reset

—V

—

See section on Power-on Reset

for details

D004

VDD

DD Rise Rate

to ensure Power-on Reset

0.05

—

V/ms

See section on Power-on Reset

for details*

D005

BOD

Brown-out Detect Voltage

3.65

4.0

—

4.35

4.4

BODEN configuration bit is set

BODEN configuration bit is set,

Extended

D010

D013

Supply Current(2), (5)

PIC16LF62X

—

0.30

1.10

4.0

3.80

—

0.6

2.0

7.0

6.0

2.0

µA

Fosc = 4.0 MHz, V

DD = 2.0(5)

OSC = 4.0 MHz, VDD = 5.5*

Fosc = 20.0 MHz, V

DD = 5.5

Fosc = 20.0 MHz, V

DD = 4.5*

OSC = 10.0 MHz, VDD = 3.0(6)

OSC = 32 kHz, VDD = 2.0

D010

D013

D014

PIC16F62X

—

0.60

1.10

4.0

3.80

—

0.7

2.0

7.0

6.0

2.0

µA

Fosc = 4.0 MHz, V

DD = 3.0

Fosc = 4.0 MHz, V

DD = 5.5*

OSC = 20.0 MHz, VDD = 5.5

OSC = 20.0 MHz, VDD = 4.5*

OSC = 10.0 MHz, VDD = 3.0*(6)

OSC = 32 kHz, VDD = 3.0*

Legend: Rows with standard voltage device data only are shaded for improved readability.

These parameters are characterized but not tested.

†

Data in “Typ” column is at 5.0V, 25

°C, unless otherwise stated. These parameters are for design guidance only and are

not tested.

Note

1: This is the limit to which V

DD can be lowered in SLEEP mode without losing RAM data.

2: The supply current is mainly a function of the operating voltage and frequency. Other factors such as I/O pin loading and

switching rate, oscillator type, internal code execution pattern, and temperature also have an impact on the current con-

sumption.

The test conditions for all I

DD measurements in active Operation mode are:

OSC1 = external square wave, from rail to rail; all I/O pins tri-stated, pulled to V

DD,

MCLR = V

DD; WDT enabled/disabled as specified.

3: The power-down current in SLEEP mode does not depend on the oscillator type. Power-down current is measured with

the part in SLEEP mode, with all I/O pins in hi-impedance state and tied to V

DD or VSS.

4: The

∆ current is the additional current consumed when this peripheral is enabled. This current should be added to the

base I

DD or IPD measurement.

5: For RC osc configuration, current through R

EXT is not included. The current through the resistor can be estimated by the

formula Ir = V

DD/2REXT (mA) with REXT in k

Ω.

6: Commercial temperature only.

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